Curable liquid composition, method of coating, inorganic substrate, and semiconductor device
A curable liquid composition obtained by subjecting hydrogen halosiloxane or hydrogen alkoxysilane to condensation or to hydrolysis and condensation in an organic solvent in which fine polyvalent metal oxide particles with hydroxyl groups are dispersed; a method of forming a hard silica-type layer by applying onto an inorganic substrate the aforementioned composition and then curing the composition; an inorganic substrate with the aforementioned hard silica-type layer; and a semiconductor device comprising the aforementioned inorganic substrate on which a semiconductor layer is formed.
1. A method of producing a curable liquid composition comprising subjecting a silane compound represented by the following general formula (1A):
H 2 SiX 2 ,
or a mixture of a silane compound represented by the general formula (1A) and a silane compound represented by the following general formula (1B):
HSiX 3
where X represents a halogen atom or an alkoxy group with 1 to 4 carbon atoms, to a reaction of condensation, or to a reaction of hydrolysis with condensation, in an organic solvent that contains dispersed fine particles of polyvalent metal oxide having hydroxyl groups.
2. The method of producing the curable liquid composition of claim 1 , wherein the aforementioned fine particles of the polyvalent metal oxide are fine particles of silica, titanium oxide, zirconium oxide, alumina oxide, zinc oxide, tin oxide, composite fine particles of silica and titanium oxide, composite fine particles of silica and zirconium oxide, or composite fine particles of silica and alumina.
3. The method of producing the curable liquid composition of claim 1 , wherein the silane compound is represented by one or more types of silane compounds selected from the group consisting of dihydrogen dichlorosilane, hydrogen trichlorosilane, dihydrogen dimethoxysilane, dihydrogen diethoxysilane, hydrogen trimethoxysilane, or hydrogen triethoxysilane.
4. A method of coating an inorganic substrate comprising coating the inorganic substrate with the curable liquid composition produced by the method of claim 1 , and subsequently curing curable components of the coating, whereby a silica-based layer that contains fine particles of polyvalent metal oxide and that has a pencil hardness in the range of 4H to 9H is formed on the inorganic substrate.
5. The method of coating an inorganic substrate according to claim 4 , wherein curing is carried out by heating at a temperature no less than 150° C. in an oxygen-containing atmosphere, heating at a temperature no less than 200° C. in an inert gas or in a vacuum, irradiating with a high-energy beam, exposing to ozone, exposing to nitrous oxide gas, or exposing to wet ammonia gas.
6. An inorganic substrate characterized by having a silica-based layer that contains fine particles of polyvalent metal oxide and that has a pencil hardness in the range of 4H to 9H, which has been manufactured by coating an inorganic substrate with a curable liquid composition produced by the method of claim 1 , and subsequently curing curable components of the coating.
7. A semiconductor device that has the inorganic substrate of claim 6 With the silica-based layer that contains fine particles of a polyvalent metal oxide, wherein a semiconductor layer is formed at least on the silica-based layer.
8. The semiconductor device of claim 7 , wherein the inorganic substrate is a thin glass plate or a thin stainless steel plate, the semiconductor layer is a thin silicon semiconductor layer, or a compound-type semiconductor layer, and wherein the semiconductor device is a thin film solar cell.