Display device and manufacturing method thereof
View Patent ↗A display device includes a first wiring functioning as a gate electrode formed over a substrate, a gate insulating film formed over the first wiring, a second wiring and an electrode layer provided over the gate insulating film, and a high-resistance oxide semiconductor layer formed between the second wiring and the electrode layer are included. In the structure, the second wiring is formed using a stack of a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer, and the electrode layer is formed using a stack of the low-resistance oxide semiconductor layer and the conductive layer which is stacked so that a region functioning as a pixel electrode of the low-resistance oxide semiconductor layer is exposed.
1. A display device comprising:
a gate electrode formed over a substrate;
a gate insulating film formed over the gate electrode;
a wiring and an electrode layer provided over the gate insulating film; and
a high-resistance oxide semiconductor layer formed between the wiring and the electrode layer over the gate insulating film,
wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer,
wherein the electrode layer comprises a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer, and
wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode.
2. A display device comprising:
a gate electrode formed over a substrate;
a gate insulating film formed over the gate electrode;
a high-resistance oxide semiconductor layer formed in an island shape over the gate insulating film; and
a wiring and an electrode layer provided over the gate insulating film and the high-resistance oxide semiconductor layer,
wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer,
wherein the electrode layer comprises a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer, and
wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode.
3. A display device comprising:
a wiring and an electrode layer over a substrate;
a high-resistance oxide semiconductor layer formed between the wiring and the electrode layer over the substrate;
a gate insulating film formed over the high-resistance oxide semiconductor layer; and
a gate electrode formed over the gate insulating film,
wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer,
wherein the electrode layer comprises a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer, and
wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode.
4. A display device comprising:
a high-resistance oxide semiconductor layer formed in an island shape over a substrate;
a wiring and an electrode layer over the substrate and the high-resistance oxide semiconductor layer;
a gate insulating film formed over the high-resistance oxide semiconductor layer; and
a gate electrode formed over the gate insulating film,
wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer,
wherein the electrode layer comprises a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer, and
wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode.
5. A method of manufacturing a display device, comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a wiring and an electrode layer over the gate insulating film by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer; and
forming a high-resistance oxide semiconductor layer between the wiring and the electrode layer over the gate insulating film,
wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.
6. A method of manufacturing a display device, comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a high-resistance oxide semiconductor layer so as to have an island shape over the gate insulating film; and
forming a wiring and an electrode layer over the gate insulating film and the high-resistance oxide semiconductor layer by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer,
wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.
7. A method of manufacturing a display device, comprising the steps of:
forming a wiring and an electrode layer over a substrate by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer;
forming a high-resistance oxide semiconductor layer between the wiring and the electrode layer over the substrate;
forming a gate insulating film over the high-resistance oxide semiconductor layer; and
forming a gate electrode over the gate insulating film,
wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.
8. A method of manufacturing a display device, comprising the steps of:
forming a high-resistance oxide semiconductor layer so as to have an island shape over a substrate;
forming a wiring and an electrode layer over the substrate and the high-resistance oxide semiconductor layer by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer;
forming a gate insulating film over the high-resistance oxide semiconductor layer; and
forming a gate electrode over the gate insulating film,
wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.
9. The display device according to claim 1 , wherein the display device is incorporated into an electronic apparatus.
10. The display device according to claim 2 , wherein the display device is incorporated into an electronic apparatus.
11. The display device according to claim 3 , wherein the display device is incorporated into an electronic apparatus.
12. The display device according to claim 4 , wherein the display device is incorporated into an electronic apparatus.