IP Library › Granted Patent US 8,441,022
Granted Patent B2
US 8,441,022 · App. 13/112,405 · Granted May 14, 2013

Semiconductor light-emitting device

Inventors: Nobuhiro Nishiyama (Osaka, JP); Masaaki Katoh (Osaka, JP)
Assignee: Sharp Kabushiki Kaisha
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,441,022
App. No.
13/112,405
Granted
May 14, 2013
Kind
B2
Abstract

An outer lead connected to an inner lead penetrating a molded resin section, and another outer lead connected to another inner lead penetrating the molded resin section are provided on an outer wall surface of the molded resin section. The outer lead has a surface area greater than that of the another outer lead.

Claims (29)

1. A semiconductor light-emitting device, for emitting light to an outside, the semiconductor light-emitting device being mountable on a substrate,

the semiconductor light-emitting device comprising:

at least one semiconductor light-emitting element;

a semiconductor element;

a first lead frame including a first inner lead and a first outer lead connected to each other, the first inner lead having a surface on which the at least one semiconductor light-emitting element is provided, the first outer lead being connectable to a corresponding electrode of the substrate;

a second lead frame including a second inner lead and a second outer lead connected to each other, the second inner lead having a surface on which the semiconductor element is provided, the second outer lead being connectable to a corresponding electrode of the substrate; and

a fixing member for fixing the first lead frame and the second lead frame thereto,

both the first outer lead connected to the first inner lead penetrating the fixing member and the second outer lead connected to the second inner lead penetrating the fixing member being provided on an outer wall surface of the fixing member,

the first outer lead having a surface area greater than that of the second outer lead,

the device further comprising an insulating layer formed between the first inner lead and the second inner lead so as to be oblique to one side of the semiconductor light-emitting device,

the insulating layer being made of a material identical to that for the fixing member.

2. The semiconductor light-emitting device as set forth in claim 1 , wherein the fixing member is made of a molded resin.

3. The semiconductor light-emitting device as set forth in claim 1 , wherein the fixing member is made of ceramics.

4. The semiconductor light-emitting device as set forth in claim 1 ,

wherein the device is formed so as to have a rectangular shape, and

the insulating layer is formed oblique to a short side of the semiconductor light-emitting device.

5. The semiconductor light-emitting device as set forth in claim 1 , wherein a convex member is formed on the outer wall surface of the fixing member between the first outer lead and the second outer lead.

6. The semiconductor light-emitting device as set forth in claim 1 , wherein the first inner lead has a concave portion formed therein,

the at least one semiconductor light-emitting element is provided in the concave portion.

7. The semiconductor light-emitting device as set forth in claim 6 , wherein the at least one semiconductor light-emitting element is at least two semiconductor light-emitting elements and the at least two semiconductor light-emitting elements provided in the concave portion are electrically connected in parallel or in series with each other,

the semiconductor element is positioned at a level higher than that at which the at least two semiconductor light-emitting elements are positioned.

8. The semiconductor light-emitting device as set forth in claim 6 , wherein the concave portion is filled up with a fluorescent light-transmitting resin, and

a light-transmitting resin is formed over the concave portion which is filled up with the fluorescent light-transmitting resin.

9. The semiconductor light-emitting device as set forth in claim 6 , wherein the concave portion is filled up with a fluorescent light-transmitting resin, and

another fluorescent light-transmitting resin is further formed over the concave portion which is filled up with the fluorescent light-transmitting resin.

10. The semiconductor light-emitting device as set forth in claim 8 , wherein the light-transmitting resin is made of an epoxy resin or silicon resin.

11. The semiconductor light-emitting device as set forth in claim 1 , wherein the first outer lead and the second outer lead are coated with a metal having a solder wettability greater than that of a metal of which the first outer lead and the second outer lead are made.

12. The semiconductor light-emitting device as set forth in claim 11 , wherein the first outer lead and the second outer lead are made of copper,

the metal with which the first outer lead and the second outer lead are coated is tin, gold or silver.

Assignments (2)
NUNC PRO TUNC ASSIGNMENT Recorded Jul 19, 2020
From: SHARP KABUSHIKI KAISHA
To: LEDCOMM LLC
Reel/Frame 053247/0249 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 20, 2011
From: NISHIYAMA, NOBUHIRO; KATOH, MASAAKI
To: SHARP KABUSHIKI KAISHA
Reel/Frame 026315/0820 →
Priority Claims (1)
JP 2010-117807 · May 21, 2010 · national
Continuity (1)
Related Publication 20110284888A1 · Nov 24, 2011