Phonon-enhanced crystal growth and lattice healing
A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.
1. A system for modifying dislocation distributions in semiconductor materials comprising:
a crystal lattice;
at least two vibrational sources for producing a superposition of a plurality of excitations of a vibrational mode from opposite directions having phonon frequencies using sub-bandgap light that is absorbed preferentially at a dislocation so as to enhance dislocation motion through said crystal lattice, sound waves or pressure waves are created by pulsed contact with said semiconductor materials.
2. The system of claim 1 further comprising a heating element to further enhance the dislocation motion through the crystal lattice.
3. The system of claim 1 , wherein at least one excitation of said vibrational mode comprises acoustical, thermal, or optical modes.
4. The system of claim 1 , wherein at least one excitation of said vibrational mode produces a traveling wave front which acts to create areas of cyclic stress inside the crystal lattice.
5. The system of claim 1 , wherein said at least two vibrational sources comprise a laser or other coherent photon source.
6. The system of claim 1 , wherein said at least two vibrational sources produce sound waves or pressure waves created by coupling with the semiconductor materials.
7. The system of claim 1 , wherein said at least two vibrational sources produce thermal gradients, thermal pulses and temperature variations.
8. The system of claim 1 , wherein said at least two vibrational sources comprises pulses, an oscillating electric field, a constant electric field, or a combination thereof.
9. The system of claim 1 , wherein at least one excitation of said vibrational mode is created to move dislocations to overlapping locations where recombination and annihilation occur or a surface so as to create reduction in dislocation densities.
10. A method of modifying dislocation distributions in semiconductor materials comprising:
providing at least two vibrational sources;
producing a superposition of a plurality of excitations of a vibrational mode from opposite directions using the said at least two vibrational sources, at least one excitation of said vibrational mode having phonon frequencies using sub-bandgap light that is absorbed preferentially at a dislocation so as to enhance dislocation motion through a crystal lattice, sound waves or pressure waves are created by pulsed contact with said semiconductor materials.
11. The method of claim 10 further comprising a heating element to further enhance the dislocation motion through the crystal lattice.
12. The method of claim 10 , wherein at least one excitation of said vibrational mode comprises acoustical, thermal, or optical modes.
13. The method of claim 10 , wherein at least one excitation of said vibrational mode produces a traveling wave front which acts to create areas of cyclic stress inside the crystal lattice.
14. The method of claim 10 , wherein said at least two vibrational sources comprise a laser or other coherent photon source.
15. The method of claim 10 , wherein said at least two vibrational sources produce sound waves or pressure waves created by coupling with the semiconductor materials.
16. The method of claim 10 , wherein said at least two vibrational sources produce thermal gradients, thermal pulses and temperature variations.
17. The method of claim 10 , wherein said at least two vibrational sources comprises pulses, an oscillating electric field, a constant electric field, or a combination thereof.
18. The method of claim 10 , wherein at least one excitation of said vibrational mode is created to move dislocations to overlapping locations where recombination and annihilation occur or a surface so as to create reduction in dislocation densities.