III-nitride power semiconductor device
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
1. A III-nitride power semiconductor device comprising:
a III-nitride heterojunction;
a gate insulation body over said heterojunction;
a barrier body over said gate insulation body;
a conductive gate body over said barrier body, said conductive gate body and said barrier body forming a gate electrode;
first and second electrodes coupled to said heterojunction, wherein a portion of said barrier body is disposed between said first electrode and said heterojunction.
2. The III-nitride semiconductor device of claim 1 , wherein said barrier body comprises TiN.
3. The III-nitride power semiconductor device of claim 1 , wherein said barrier body is a metal selected from the group consisting of Ta, W, Si, Mo, Cr, Co, and Pd.
4. The III-nitride power semiconductor device of claim 1 , wherein said barrier body is an alloy selected from the group consisting of TiSiN, TaN, TaSiN, WN, WSiN, and WBN.
5. The III-nitride power semiconductor device of claim 1 , wherein said gate insulation body comprises silicon dioxide.
6. The III-nitride power semiconductor device of claim 1 , wherein said gate insulation body comprises silicon nitride.
7. The III-nitride power semiconductor device of claim 1 , further comprising a field insulation body disposed between said first electrode and said gate electrode, said field insulation body being thicker than said gate insulation body.
8. The III-nitride power semiconductor device of claim 1 , further comprising a field insulation body disposed between said second electrode and said gate electrode, said field insulation body being thicker than said gate insulation body.
9. The III-nitride power semiconductor device of claim 7 , wherein said field insulation body comprises silicon dioxide.
10. The III-nitride power semiconductor device of claim 8 , wherein said field insulation body comprises silicon dioxide.
11. The III-nitride power semiconductor device of claim 7 , wherein said barrier body extends from said gate insulation body over a portion of said field insulation body.
12. The III-nitride power semiconductor device of claim 8 , wherein said barrier body extends from said gate insulation body over a portion of said field insulation body.
13. The III-nitride power semiconductor device of claim 1 , wherein said heterojunction includes a III-nitride channel layer, and a III-nitride barrier layer on said III-nitride channel layer.
14. The III-nitride power semiconductor device of claim 13 , wherein said III-nitride channel layer comprises GaN, and said III-nitride barrier layer comprises AlGaN.
15. The III-nitride power semiconductor device of claim 1 , further comprising a substrate supporting said heterojunction.
16. The III-nitride power semiconductor device of claim 15 , wherein said substrate is selected from the group consisting of silicon, SiC, a III-nitride semiconductor, and sapphire.
17. The III-nitride power semiconductor device of claim 1 , wherein said conductive gate body is selected from the group consisting of N+ GaN, Si, Ge, P+ GaN, and a metal.