Optical semiconductor device and method of manufacturing optical semiconductor device
View Patent ↗A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate; forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located at both sides of the mesa structure, the p-type semiconductor layer having a thickness of 5 nm to 45 nm on the plane area; and forming a current blocking semiconductor layer on the p-type semiconductor layer so as to bury the mesa structure, a product of the thickness of the p-type semiconductor layer and a concentration of p-type impurity of the p-type semiconductor layer on the plane area being 2.5×10 19 nm/cm 3 or less.
1. A method of manufacturing an optical semiconductor device comprising:
forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate;
forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located at both sides of the mesa structure, the p-type semiconductor layer having a thickness of 5 nm to 45 nm on the plane area; and
forming a current blocking semiconductor layer on the p-type semiconductor layer so as to bury the mesa structure,
a product of the thickness of the p-type semiconductor layer and a concentration of p-type impurity of the p-type semiconductor layer on the plane area being 2.5×10 19 nm/cm 3 or less.
2. The method as claimed in claim 1 , wherein the concentration of the p-type impurity of the p-type semiconductor layer is 1.0×10 17 /cm 3 to 1.5×10 18 /cm 3 .
3. The method as claimed in claim 1 , wherein the p-type impurity of the p-type semiconductor layer is Zn, Mg, or Be.
4. The method as claimed in claim 1 , wherein:
the substrate is made of InP; and
the p-type semiconductor layer is made of InP or one of InGaAs, InGaAsP, InAlAs, InAlAsP, InAlGaAs and InAlGaAsP that are lattice-matched with InP.
5. The method as claimed in claim 1 , wherein:
a main face of the substrate is (100) plus minus 1 degree face; and
the mesa structure is formed on the main face.
6. The method as claimed in claim 5 , wherein the mesa structure extends in [011] direction.
7. The method as claimed in claim 1 , wherein the plane area is made of n-type semiconductor and includes n-type impurity having a concentration of 5.0×10 17 /cm 3 to 4.0×10 19 /cm 3 .
8. The method as claimed in claim 5 , wherein an angle of the side face of the mesa structure is 75 degrees to 105 degrees with respect to the main face of the substrate.
9. The method as claimed in claim 1 , wherein Fe is doped in the p-type semiconductor layer when forming the p-type semiconductor layer.
10. The method as claimed in claim 1 , wherein the optical semiconductor device is a semiconductor laser of direct modulation type.