Semiconductor device comprising gate electrode of one conductive layer and gate wiring of two conductive layers
View Patent ↗A semiconductor device includes an oxide semiconductor layer provided over a substrate having an insulating surface; a gate insulating film covering the oxide semiconductor layer; a first conductive layer and a second conductive layer laminated in this order over the gate insulating film; an insulating film covering the oxide semiconductor layer and a gate wiring including a gate electrode (the first and second conductive layers); and a third conductive layer and a fourth conductive layer laminated in this order over the insulating film and electrically connected to the oxide semiconductor layer. The gate electrode is formed using the first conductive layer. The gate wiring is formed using the first conductive layer and the second conductive layer. A source electrode is formed using the third conductive layer. A source wiring is formed using the third conductive layer and the fourth conductive layer.
1. A semiconductor device comprising:
an oxide semiconductor layer provided over a substrate having an insulating surface;
a gate insulating film covering the oxide semiconductor layer;
a gate wiring over the gate insulating film,
wherein the gate wiring comprises a first conductive layer and a second conductive layer over the first conductive layer,
a gate electrode including the first conductive layer and not including the second conductive layer over the gate insulating film;
an insulating film covering the oxide semiconductor layer, the gate wiring and the gate electrode;
a source wiring over the insulating film,
wherein the source wiring comprises a third conductive layer and a fourth conductive layer over the third conductive layer, and
a source electrode including the third conductive layer and not including the fourth conductive layer over the insulating film,
wherein the source wiring is electrically connected to the oxide semiconductor layer.
2. A semiconductor device according to claim 1 ,
wherein the first conductive layer and the third conductive layer each have a light-transmitting property.
3. A semiconductor device according to claim 1 ,
wherein the second conductive layer and the fourth conductive layer each have a light-blocking property.
4. A semiconductor device according to claim 3 ,
wherein the second conductive layer and the fourth conductive layer are formed using different materials.
5. A semiconductor device according to claim 1 ,
wherein the second conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.
6. A semiconductor device according to claim 1 ,
wherein the fourth conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.
7. A semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer contains at least one selected from the group consisting of indium, gallium, and zinc.
8. A semiconductor device comprising:
an oxide semiconductor layer provided over a substrate having an insulating surface;
a gate insulating film covering the oxide semiconductor layer;
a gate wiring over the gate insulating film,
wherein the gate wiring comprises a first conductive layer and a second conductive layer over the first conductive layer,
a gate electrode including the first conductive layer and not including the second conductive layer over the gate insulating film;
an insulating film covering the oxide semiconductor layer, the gate wiring and the gate electrode;
a source wiring over the insulating film,
wherein the source wiring comprises a third conductive layer and a fourth conductive layer over the third conductive layer,
a source electrode including the third conductive layer and not including the fourth conductive layer over the insulating film,
wherein the source wiring is electrically connected to the oxide semiconductor layer; and
a capacitor wiring comprising a fifth conductive layer and a sixth conductive layer over the fifth conductive layer.
9. A semiconductor device according to claim 8 ,
wherein the first conductive layer and the third conductive layer each have a light-transmitting property.
10. A semiconductor device according to claim 8 ,
wherein the second conductive layer and the fourth conductive layer each have a light-blocking property.
11. A semiconductor device according to claim 10 ,
wherein the second conductive layer and the fourth conductive layer are formed using different materials.
12. A semiconductor device according to claim 8 ,
wherein the second conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.
13. A semiconductor device according to claim 8 ,
wherein the fourth conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.
14. A semiconductor device according to claim 8 ,
wherein the oxide semiconductor layer contains at least one selected from the group consisting of indium, gallium, and zinc.
15. A semiconductor device comprising:
a first oxide semiconductor layer provided over a substrate having an insulating surface;
a gate insulating film covering the first oxide semiconductor layer;
a gate wiring over the gate insulating film,
wherein the gate wiring comprises a first conductive layer and a second conductive layer over the first conductive layer,
a gate electrode including the first conductive layer and not including the second conductive layer over the gate insulating film;
an insulating film covering the first oxide semiconductor layer, the gate wiring and the gate electrode;
a source wiring over the insulating film,
wherein the source wiring comprises a third conductive layer and a fourth conductive layer provided over the third conductive layer,
a source electrode including the third conductive layer and not including the fourth conductive layer over the insulating film,
wherein the source wiring is electrically connected to the first oxide semiconductor layer;
a capacitor wiring comprising a fifth conductive layer and a sixth conductive layer over the fifth conductive layer; and
a storage capacitor portion comprising a second oxide semiconductor layer, the gate insulating film, the fifth conductive layer, the insulating film, and a seventh conductive layer,
wherein a material included in the seventh conductive layer is the same as a material included in the third conductive layer.
16. A semiconductor device according to claim 15 ,
wherein the first conductive layer and the third conductive layer each have a light-transmitting property.
17. A semiconductor device according to claim 15 ,
wherein the second conductive layer and the fourth conductive layer each have a light-blocking property.
18. A semiconductor device according to claim 17 ,
wherein the second conductive layer and the fourth conductive layer are formed using different materials.
19. A semiconductor device according to claim 15 ,
wherein the second conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.
20. A semiconductor device according to claim 15 ,
wherein the fourth conductive layer is formed using a metal material or alloy containing one element or a plurality of elements selected from the group consisting of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), and neodymium (Nd), or a nitride of any of the above metals.
21. A semiconductor device according to claim 15 ,
wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer contains at least one selected from the group consisting of indium, gallium, and zinc.