Resist underlayer film forming composition containing liquid additive
To provide a resist underlayer film forming composition for lithography that is used in a lithography process for production of a semiconductor device. There is provided a resist underlayer film forming composition used in a lithography process for production of a semiconductor device, comprising a resin (A), a liquid additive (B) and a solvent (C). The liquid additive (B) may be an aliphatic polyether compound. The liquid additive (B) may be a polyether polyol, polyglycidyl ether or a combination thereof. Further, there is provided a method of manufacturing a semiconductor device, including the steps of forming a resist underlayer film by applying the resist underlayer film forming composition on a semiconductor substrate and by calcining the composition; forming a photoresist layer on the underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and developing the photoresist layer after the exposure to light.
1. A resist underlayer film forming composition comprising:
a resin (A);
a liquid additive (B) being liquid at a temperature from 20° C. to about 270° C.; and
a solvent (C),
wherein
the resin (A) is a compound having a protected carboxyl group and a compound having a group reactable with a carboxyl group, or a compound having a protected carboxyl group and a group reactable with a carboxyl group, and
the liquid additive (B) is a polyether polyol represented by Formula (1):
where:
n represents an integer of 1 to 300;
m represents an integer of 2 to 6;
R 1 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atom(s); and
R 2 represents an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, an alkylcarbonyl group having 2 to 10 carbon atoms, an alkylcarbonylamino group having 2 to 10 carbon atoms, an alkyloxyalkyl group having 2 to 10 carbon atoms, an alkylamino group having 1 to 10 carbon atoms, an alkyldiamino group having 1 to 10 carbon atoms, or a combination thereof, R 2 being an organic group capable of having a valence number of 2 to 6 according to the number m of polyoxyalkylene groups.
2. The resist underlayer film forming composition according to claim 1 , further comprising a light absorbing compound (D).
3. A method of forming a resist underlayer film used in a lithography process for production of a semiconductor device, the method comprising:
applying the resist underlayer film forming composition according to claim 1 on a substrate and
subjecting the composition to a temperature from 80° C. to 250° C.
4. A method of manufacturing a semiconductor device, the method comprising:
forming a resist underlayer film by applying the resist underlayer film forming composition according to claim 1 on a semiconductor substrate and by subjecting the composition to a temperature from 80° C. to 250° C.;
forming a photoresist layer on the underlayer film;
exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and
developing the photoresist layer after the exposure to light.
5. A method of manufacturing a semiconductor device, the method comprising:
forming a resist underlayer film by applying a resist underlayer film forming composition on a semiconductor substrate and by subjecting the composition to a temperature from 80° C. to 250° C.;
forming a photoresist layer on the underlayer film;
exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and
developing the photoresist layer after the exposure to light,
wherein
the resist underlayer film forming composition comprises:
a resin (A);
a liquid additive (B) being liquid at a temperature from 20° C. to about 270° C.; and
a solvent (C), and
the liquid additive (B) comprises a polyether polyol represented by Formula (1):
where:
n represents an integer of 1 to 300;
m represents an integer of 2 to 6;
R 1 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atom(s); and
R 2 represents an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, an alkylcarbonyl group having 2 to 10 carbon atoms, an alkylcarbonylamino group having 2 to 10 carbon atoms, an alkyloxyalkyl group having 2 to 10 carbon atoms, an alkylamino group having 1 to 10 carbon atoms, an alkyldiamino group having 1 to 10 carbon atoms, or a combination thereof, R 2 being an organic group capable of having a valence number of 2 to 6 according to the number m of polyoxyalkylene groups.