Liquid crystalline rylene tetracarboxylic acid derivatives and use thereof
The present invention relates to liquid-crystalline rylene tetracarboxylic acid derivatives, to processes for their preparation and to their use as n-type organic semiconductors for producing organic field-effect transistors and solar cells.
1. A n-semiconductor for organic field-effect transistors or solar cells comprising compounds of the general formula (I):
wherein
the R 11 , R 12 , R 13 , R 14 , R 21 , R 22 , R 23 , R 24 , R 31 , R 32 , R 33 , R 34 , R 41 , R 42 , R 43 , and R 44 radicals are each independently selected from hydrogen, F, Cl, and Br;
the R c and R d radicals are each independently selected from groups of the formulae (II.1) to (II.5):
in which
# represents the bonding site to the imide nitrogen atom,
p is 0 or 1,
x is 2 or 3,
A where present, is a C 1 -C 10 -alkylene group which may be interrupted by one or more nonadjacent groups which are selected from —O— and —S—,
where, in the case that x in the compounds of the formula (II.1) is 2, the carbon atom which bears the R i radicals additionally bears a hydrogen atom, and
where x in the compounds of the formula (II.5) is 2, and
the R i radicals are each independently selected from C 4 -C 30 -alkyl which may be interrupted by one or more nonadjacent oxygen atom(s), where at least one of the R i radicals in the compounds of the formula (II.1) may also be C 4 -C 30 -alkyloxy or C 4 -C 30 -alkylthio.
2. The n-semiconductor according to claim 1 , wherein the R i radicals are each independently selected from linear C 4 -C 30 -alkyl which may be interrupted by one or more nonadjacent oxygen atom(s).
3. The n-semiconductor according to claim 1 , wherein the R 11 , R 12 , R 13 , R 14 , R 21 , R 22 , R 23 , R 24 , R 31 , R 32 , R 33 , R 34 , R 41 , R 42 , R 43 , and R 44 radicals in the compounds of the formula (I) are all hydrogen.
4. The n-semiconductor according to claim 1 , wherein at least one of the R 11 , R 12 , R 13 , R 14 , R 21 , R 22 , R 23 , R 24 , R 31 , R 32 , R 33 , R 34 , R 41 , R 42 , R 43 , and R 44 radicals in the compounds of the formula (I) is a radical other than hydrogen.
5. The n-semiconductor according to claim 1 , wherein the R i radicals are selected from C 4 -C 18 -alkyl.
6. The n-semiconductor according to claim 1 comprising compounds of the formula (I) where the R c and R d groups are each groups of the formula (II.1)
in which
# represents the bonding site to the imide nitrogen atom, and
the R i radicals are selected from C 4 -C 8 -alkyl.
7. The n-semiconductor according to claim 1 comprising at least one compound of the formula (I) where the R c and R d radicals are each independently selected from groups of the formulae (II.2) to (II.5).
8. The n-semiconductor according to claim 7 comprising at least one compound of the formula (I) where the R c and R d radicals are each independently selected from groups of the formula (II.2) and x in the groups of the formula (II.2) is 3.
9. The n-semiconductor according to claim 1 at least one compound which is selected from:
in which R and R′ are each C 4 -C 18 -alkyl.
10. The n-semiconductor for organic field-effect transistors comprising compounds of the general formula (I) as defined in claim 1 .
11. The n-semiconductor for excitonic solar cells comprising compounds of the general formula (I) as defined in claim 1 .
12. A process for preparing compounds of the formula (I)
wherein
n is 4, and
the R c and R d radicals are each independently selected from groups of the formulae (II.1) to (II.5):
in which
# represents the bonding site to the imide nitrogen atom,
p is 0 or 1,
x is 2 or 3,
A where present, is a C 1 -C 10 -alkylene group which may be interrupted by one or more nonadjacent groups which are selected from —O— and —S—,
where, in the case that x in the compounds of the formula (II.1) is 2, the carbon atom which bears the R i radicals additionally bears a hydrogen atom, and
where x in the compounds of the formula (II.5) is 2, and
the R i radicals are each independently selected from C 4 -C 30 -alkyl which may be interrupted by one or more nonadjacent oxygen atom(s),
in which
α) a compound of the formula (IIIa)
where
n′ is 2
is reacted with a diborane of the formula (IV)
in which
R α are the same or different and are each independently hydrogen, C 1 -C 30 -alkyl, C 5 -C 8 -cycloalkyl, aryl or hetaryl, where the R α radicals may also be bonded to one another to form a five-membered ring which comprises the two oxygen atoms and the boron atom and may be substituted on the carbon atoms by up to 4 C 1 -C 30 -alkyl, C 5 -C 8 -cycloalkyl, aryl or hetaryl groups,
to obtain a compound of the formula (V)
β) the compound of the formula (V) is subjected to a Suzuki coupling reaction with a compound of the formula (IIIb)
where
n″ is 2,
in the presence of a transition metal catalyst and of a base to obtain a compound of the formula (VI)
γ) the compound of the formula (VI) is converted by cyclodehydrogenation in an organic reaction medium which has hydroxyl and amino functions and comprises an essentially undissolved base to a compound of the formula (I) where n represents the sum of n′ and n″.
13. A process for preparing compounds of the formula (I)
wherein
n is 4, and
the R c and R d radicals are each independently selected from groups of the formulae (II.1) to (II.5):
in which
# represents the bonding site to the imide nitrogen atom,
p is 0 or 1,
x is 2 or 3,
A where present, is a C 1 -C 10 -alkylene group which may be interrupted by one or more nonadjacent groups which are selected from —O— and —S—,
where, in the case that x in the compounds of the formula (II.1) is 2, the carbon atom which bears the R i radicals additionally bears a hydrogen atom, and
where x in the compounds of the formula (II.5) is 2, and
the R i radicals are each independently selected from C 4 -C 30 -alkyl which may be interrupted by one or more nonadjacent oxygen atom(s),
in which a perylene-3,4-dicarboximide of the general formula (VII)
in the presence of a base-stable solvent and of an alkali metal base or alkaline earth metal base, is reacted with a compound of the general formula (VIII)
where n′″ is 1 and Z is hydrogen, bromine or chlorine.
14. A compound of the general formula (I)
wherein
n is 4,
the R n1 , R n2 , R n3 and R n4 radicals are each independently selected from hydrogen, F, Cl and Br, and
the R c and R d radicals are each independently selected from groups of the formulae (II.1) to (II.5):
in which
# represents the bonding site to the imide nitrogen atom,
p is 0 or 1,
x is 2 or 3,
A where present, is a C 1 -C 10 -alkylene group which may be interrupted by one or more nonadjacent groups which are selected from —O— and —S—,
where, in the case that x in the compounds of the formula (II.1) is 2, the carbon atom which bears the R i radicals additionally bears a hydrogen atom, and
where x in the compounds of the formula (II.5) is 2, and
the R i radicals are each independently selected from C 4 -C 30 -alkyl which may be interrupted by one or more nonadjacent oxygen atom(s), where at least one of the R i radicals in the compounds of the formula (II.1) may also be C 4 -C 30 -alkyloxy or C 4 -C 30 -alkylthio, excluding:
compounds of the formula (I) in which n is 4, the R n1 , R n2 , R n3 and R n4 radicals are all hydrogen, and the R c and R d radicals are each a radical of the formula (II.1) or (II.2);
wherein the compound has n-semiconductor properties.
15. A compound according to claim 14 where at least one of the R n1 , R n2 , R n3 and R n4 radicals is a radical other than hydrogen.
16. A compound of the formula
wherein the compound has n-semiconductor properties.
17. An organic field-effect transistor comprising a substrate having at least one gate structure, a source electrode and a drain electrode, and at least one compound of the formula I as defined in claim 14 or claim 16 as an n-semiconductor.
18. A substrate comprising a multitude of organic field-effect transistors, wherein at least some of the field-effect transistors comprise at least one compound of the formula I as defined in claim 14 or claim 16 as an n-semiconductor.
19. A semiconductor unit comprising at least one substrate as defined in claim 18 .
20. A method of using at least one compound of the general formula (I) as defined in claim 14 or claim 16 in organic field-effect transistors.
21. A method of using at least one compound of the general formula (I) as defined in claim 14 or claim 16 for optical labels, for invisible marking of products, as fluorescent dyes, as a fluorescent label for biomolecules and as pigments.
22. A method of using at least one compound of the general formula (I) as defined in claim 14 or claim 16 as a fluorescent dye in a display based on fluorescence conversion; in a light-collecting plastics part which may be combined with a solar cell; as a pigment dye in electrophoretic displays; and as a fluorescent dye in an application based on chemoluminescence.