Patent

1. A generator for a 68 Gallium ( 68 Ga) daughter nuclide, wherein the 68 Germanium ( 68 Ge) parent nuclide thereof is attached specifically to a support through a trihydroxyphenyl group or a dihydroxyphenyl group and continuously disintegrates to 68 Ga by electron capture at a half-life of 270.82d, wherein the trihydroxyphenyl group or dihydroxyphenyl group is covalently bound via a linker to a support material, the linker being selected from the group consisting of: C 2 to C 20 esters; C 2 to C 20 alkyls, phenyl, thiourea, C 2 -C 20 amines, maleimide, melamine, trihydroxyphenyl alkoxsilanes, in particular 1,2,3-trihydroxyphenyltriethoxysilane, trihydroxyphenyldiethoxysilane, 1,2,3-trihydroxyphenylethoxysilane, 1,2,3-trihydroxyphenyltripropoxysilane, 1,2,3-trihydroxyphenylchlorosilane, epichlorohydrin, isothiocyanates, thiols.

2. The 68 Ga generator of claim 1 , wherein the support material is selected from the group consisting of: inorganic inert oxide materials, in particular silica gel, SiO 2 , TiO 2 , SnO 2 , Al 2 O 3 , ZnO, ZrO 2 , HfO 2 , organic inert polymers and copolymers, in particular styrene-divinylbenzene, polystyrene, styrene-acrylonitrile, styrene-acrylonitrile-methylmethacrylate, acrylonitrile-methylmethacrylate, polyacrylonitrile, polyacrylates, acrylic or methacrylic esters, acrylonitrile-unsaturated dicarboxylic acid-styrene, vinylidene chloride-acrylonitrile.

3. The 68 Ga generator of claim 1 , wherein the trihydroxyphenyl group is 1,2,3-trihydroxybenzene (pyrogallol).

4. The 68 Ga generator according of claim 1 , wherein silica gel is employed as a support material, and 1,2,3-trihydroxyphenyltriethoxysilane is employed as a linker.

5. The 68 Ga generator of claim 4 , wherein the silica gel has an average a particle size of 10-150 μm and an average pore size of 6-50 nm.

6. The 68 Ga generator of claim 4 , wherein the 68 Ge-charged trihydroxyphenol group of the support material is treated with 0.05 to 0.5 M HCl for specifically eluting the 68 Ga ions formed by radioactive decay of the parent nuclide.

7. The 68 Ga generator of claim 1 , wherein the parent nuclide 68 Ge is employed in the form of a compound having the oxidation value IV.

8. The 68 Ga generator of claim 7 , wherein an aqueous solution of a 68 Ge(IV) salt is employed for attaching 68 Ge to the trihydroxyphenol group, in particular 68 Ge-aqua ions.

9. The 68 Ga generator of claim 1 , wherein the produced 68 Ga possesses a purity permitting its direct radiopharmaceutical utilization, with the content of impurities, in particular metallic impurities, being in a range from 10 to 100 ppb (by mass), preferably between 1 and 10 ppb (by mass), and in a particularly preferred manner less than 1 ppb (by mass).