Magnetic sensor including a bridge circuit
A magnetic sensor includes a bridge circuit with a first, a second, a third, and a fourth resistor annularly and electrically connected together in this order, and a compensation resistor. The compensation resistor is connected to a first point between the fourth resistor and the first resistor. The first to fourth resistors include a first to fourth tunnel magneto-resistance element, respectively. Each of the magnetization directions in the magnetization fixed layers in the second and fourth magneto resistance elements is opposite to the magnetization direction in the magnetization fixed layer in the first magneto resistance element. The magnetization direction in the magnetization fixed layer in the third magneto resistance element is the same as the magnetization direction in the magnetization fixed layer in the first magneto resistance element. The resistance of the compensation resistor varies with a period of 180 degrees with respect to a rotation angle of the external field.
1. A magnetic sensor comprising:
a bridge circuit with a first resistor, a second resistor, a third resistor, and a fourth resistor annularly and electrically connected together in this order;
a compensation resistor, one end of the compensation resistor connected to a point at which the fourth resistor is connected with the first resistor, and the compensation resistor includes a fifth resistor and a sixth resistor connected in parallel with the fifth resistor, wherein:
a voltage is applied between another end of the compensation resistor and a point at which the second resistor is connected with the third resistor,
the first, second, third, and fourth resistors comprise a first magneto resistance element, a second magneto resistance element, a third magneto resistance element, and a fourth magneto resistance element, respectively, and each of the magneto resistance elements is a tunnel magneto-resistance element comprising a magnetization fixed layer with a magnetization direction fixed with respect to an external magnetic field, a ferromagnetic layer with a magnetization direction rotating in response to the external magnetic field, and an insulating layer sandwiched between the magnetization fixed layer and the ferromagnetic layer,
each of the magnetization directions in the magnetization fixed layers in the second and the fourth magneto resistance elements is opposite to the magnetization direction in the magnetization fixed layer in the first magneto resistance element,
the magnetization direction in the magnetization fixed layer in the third magneto resistance element is the same as the magnetization direction in the magnetization fixed layer in the first magneto resistance element,
an electric resistance of the compensation resistor varies with a period of 180 degrees with respect to a rotation angle of the external magnetic field,
the fifth and sixth resistors comprise a fifth magneto resistance element and a sixth magneto resistance element, respectively, and each of the magneto resistance elements comprises a magnetization fixed layer with a magnetization direction fixed with respect to the external magnetic field, a ferromagnetic layer with a magnetization direction rotating in response to the external magnetic field, and a nonmagnetic intermediate layer sandwiched between the magnetization fixed layer and the ferromagnetic layer, and
the magnetization direction in the magnetization fixed layer in the fifth magneto resistance element is opposite to the magnetization direction in the magnetization fixed layer in the sixth magneto resistance element.
2. The magnetic sensor according to claim 1 , wherein the fifth resistor comprises a plurality of the fifth magneto resistance elements connected together in series, and
the sixth resistor comprises a plurality of the sixth magneto resistance elements connected together in series.
3. The magnetic sensor according to claim 2 , wherein the total number of the fifth magneto resistance elements is the same as the total number of the sixth magneto resistance elements.
4. The magnetic sensor according to claim 3 , wherein the total number of the fifth magneto resistance elements is at least 2 and at most 10, and the total number of the sixth magneto resistance elements is at least 2 and at most 10.
5. The magnetic sensor according to claim 1 wherein each of the magnetization directions in the magnetization fixed layers in the fifth and sixth magneto resistance elements is orthogonal to each of the magnetization directions in the magnetization fixed layers in the first, second, third, and fourth magneto resistance elements.
6. The magnetic sensor according to claim 1 , further comprising a measurement instrument configured to measure a potential difference between a first point and a second point, the first point being a point at which the first resistor is connected with the second resistor, the second point being a point at which the third resistor is connected with the fourth resistor.
7. A magnetic sensor comprising:
a bridge circuit with a first resistor, a second resistor, a third resistor, and a fourth resistor annularly and electrically connected together in this order; and
a compensation resistor, one end of the compensation resistor connected to a point at which the fourth resistor is connected with the first resistor, and including a fifth resistor and a sixth resistor connected in series with the fifth resistor, wherein:
a voltage is applied between another end of the compensation resistor and a point at which the second resistor is connected with the third resistor,
the first, second, third, and fourth resistors comprise a first magneto resistance element, a second magneto resistance element, a third magneto resistance element, and a fourth magneto resistance element, respectively, and each of the magneto resistance elements is a tunnel magneto-resistance element comprising a magnetization fixed layer with a magnetization direction fixed with respect to an external magnetic field, a ferromagnetic layer with a magnetization direction rotating in response to the external magnetic field, and an insulating layer sandwiched between the magnetization fixed layer and the ferromagnetic layer,
each of the magnetization directions in the magnetization fixed layers in the second and the fourth magneto resistance elements is opposite to the magnetization direction in the magnetization fixed layer in the first magneto resistance element
the magnetization direction in the magnetization fixed layer in the third magneto resistance element is the same as the magnetization direction in the magnetization fixed layer in the first magneto resistance element,
an electric resistance of the compensation resistor varies with a period of 180 degrees with respect to a rotation angle of the external magnetic field,
the fifth and sixth resistors comprise a fifth magneto resistance element and a sixth magneto resistance element, respectively, and each of the magneto resistance elements comprises a magnetization fixed layer with a magnetization direction fixed with respect to the external magnetic field, a ferromagnetic layer with a magnetization direction rotating in response to the external magnetic field, and a nonmagnetic intermediate layer sandwiched between the magnetization fixed layer and the ferromagnetic layer, and
the magnetization direction in the magnetization fixed layer in the fifth magneto resistance element is opposite to the magnetization direction in the magnetization fixed layer in the sixth magneto resistance element.
8. The magnetic sensor according to claim 7 , wherein the fifth resistor comprises a plurality of the fifth magneto resistance elements connected together in series, and
the sixth resistor comprises a plurality of the sixth magneto resistance elements connected together in series.
9. The magnetic sensor according to claim 8 , wherein the total number of the fifth magneto resistance elements is the same as the total number of the sixth magneto resistance elements.
10. The magnetic sensor according to claim 7 , wherein each of the magnetization directions in the magnetization fixed layers in the fifth and sixth magneto resistance elements is orthogonal to each of the magnetization directions in the magnetization fixed layers in the first, second, third, and fourth magneto resistance elements.