Hybrid power device
A hybrid power device is formed of a normally-on type SiC-JFET and a normally-off type Si-MOSFET, which are connected in cascode with a source of the SiC-JFET and a drain of the Si-MOSFET being connected to each other thereby forming a hybrid power FET. A gate of the SiC-JFET and a source of the Si-MOSFET are connected via a switching speed regulating resistor. A capacitor is connected to the switching speed regulating resistor in parallel to control a switching speed to a first speed in a former part of the switching period of the hybrid power FET and to a second switching speed in a latter part of the switching period. The second switching speed is lower than the first switching speed.
1. A hybrid power device comprising:
a hybrid power FET formed of a normally-on type SiC-JFET and a normally-off type Si-MOSFET, which are cascode-connected with a source of the SiC-JFET and a drain of the Si-MOSFET being connected to each other; and
a control circuit part connected to a gate of the SiC-JFET for varying a gate current and a gate voltage of the SiC-JFET in a switching period of the hybrid power FET thereby to control a switching speed of the hybrid power FET to first switching speed in a former part of the switching period and to a second switching speed lower than the first switching speed in a latter part of the switching period, respectively,
wherein the control circuit part includes:
a speed regulating resistor provided between the gate of the SiC-JFET and a source of the Si-MOSFET for regulating the switching speed; and
a capacitor connected to the gate of the SiC-JFET, and
wherein the capacitor is connected in parallel to the speed regulating resistor.
2. The hybrid power device according to claim 1 , wherein the control circuit part further includes:
a parallel circuit formed of a diode and a parallel resistor and connected in series with the capacitor; and
a series circuit of the capacitor and the parallel circuit is connected in parallel to the speed regulating resistor.
3. The hybrid power device according to claim 1 , wherein:
the control circuit part further includes a series resistor connected to the capacitor in series and having a resistance smaller than that of the speed regulating resistor.
4. A hybrid power device comprising:
a hybrid power FET formed of a normally-on type SiC-JFET and a normally-off type Si-MOSFET, which are cascode-connected to each other; and
a control circuit part connected to a gate of the SiC-JFET for regulating a switching speed of the hybrid power FET from a high switching speed to a low switching speed in a switching period of the hybrid power FET,
wherein the control circuit part includes a resistor and a capacitor, which are connected in parallel relation to each other between a gate of the SiC-JFET and a source of the Si-MOSFET.
5. The hybrid power device according to claim 4 , wherein:
the control circuit part further includes a series resistor connected in series with the capacitor between the gate of the SiC-JFET and the source of the Si-MOSFET.
6. The hybrid power device according to claim 5 , wherein:
the control circuit part further includes a diode connected in parallel to the series resistor.