Interferometric display with interferometric reflector
Interferometric modulators and methods of making the same are disclosed. In one embodiment, an interferometric modulator includes an interferometric reflector having a first reflective surface, a second reflective surface, and an optical resonant layer defined by the first reflective surface and the second reflective surface. The interferometric reflector can be configured to transmit a certain spectrum of light at a transmission peak wavelength such that the interferometric modulator has a diminished reflectance of light at the transmission peak wavelength.
1. An interferometric modulator device comprising:
an absorber layer;
an interferometric reflector configured to move in a direction generally perpendicular to the absorber layer through a variable air gap located at least partially between the absorber layer and the interferometric reflector, the interferometric reflector including:
a first partially reflective and partially transmissive layer,
a second partially reflective and partially reflective layer fixed relative to the first partially reflective and partially transmissive layer, and
a first interferometric cavity disposed between the first partially reflective and partially transmissive layer and the second partially reflective and partially reflective layer,
wherein the interferometric reflector is configured to transmit a certain spectrum of light at a transmission peak wavelength such that the interferometric modulator device has a diminished reflectance of light at the transmission peak wavelength; and
a second interferometric cavity disposed between the absorber layer and the interferometric reflector.
2. The interferometric modulator device of claim 1 , wherein the first interferometric cavity includes a transparent dielectric.
3. The interferometric modulator device of claim 1 , wherein the interferometric reflector is tuned to transmit a certain spectrum of light at a transmission peak wavelength within a visible range of light.
4. The interferometric modulator device of claim 1 , wherein the interferometric reflector is tuned to transmit more than one spectrum of light at more than one transmission peak wavelength between about 380 nm and about 750 nm.
5. The interferometric modulator device of claim 1 , wherein the absorber layer includes a material selected from a group consisting of molybdenum, titanium, tungsten, chromium, molybdenum chromium, lead selenide, and combinations thereof.
6. The interferometric modulator device of claim 1 , wherein the first reflective layer includes a material selected from a group consisting of aluminum, gold, silver, molybdenum, chromium, copper, nickel, and combinations thereof.
7. The interferometric modulator device of claim 6 , wherein the first partially reflective and partially transmissive layer and the second partially reflective and partially transmissive layer include the same material.
8. The interferometric modulator device of claim 1 , wherein the first partially reflective and partially transmissive layer has a thickness between about 1 nm and about 50 nm.
9. The interferometric modulator device of claim 1 , wherein the second partially reflective and partially transmissive layer has a thickness between about 5 nm and about 200 nm.
10. The interferometric modulator device of claim 1 , wherein the first interferometric cavity has a thickness between about 200 nm and about 3000 nm.
11. The interferometric modulator device of claim 1 , further comprising:
a display;
a processor that is configured to communicate with the display, the processor being configured to process image data; and
a memory device that is configured to communicate with the processor.
12. The interferometric modulator device of claim 11 , further comprising a driver circuit configured to send at least one signal to the display.
13. The interferometric modulator device of claim 12 , further comprising a controller configured to send at least a portion of the image data to the driver circuit.
14. The interferometric modulator device of claim 11 , further comprising an image source module configured to send the image data to the processor.
15. The interferometric modulator device of claim 14 wherein the image source module includes at least one of a receiver, transceiver, and transmitter.
16. The interferometric modulator device of claim 11 , further comprising an input device configured to receive input data and to communicate the input data to the processor.
17. An interferometric modulator device comprising:
means for at least partially absorbing light;
means for reflecting light, the reflecting means configured to move in a direction generally perpendicular to the absorbing means through a variable air gap located at least partially between the absorbing means and the reflecting means, the reflecting means including:
first means for partially reflecting and partially transmitting light,
second means for partially reflecting and partially transmitting light, the second partially reflective and partially transmissive means fixed relative to the first partially reflective and partially transmissive means, and
a first interferometric cavity disposed between the first partially reflective and partially transmissive means and the second partially reflective and partially transmissive means,
wherein the reflecting means is configured to transmit a certain spectrum of light at a transmission peak wavelength such that the interferometric modulator device has a diminished reflectance of light at the transmission peak wavelength; and
a second interferometric cavity disposed between the absorbing means and the reflecting means.
18. The interferometric modulator device of claim 17 , wherein the absorbing means includes an absorber layer.
19. The interferometric modulator device of claim 17 , wherein the first partially reflective and partially transmissive means includes a first partially reflective and partially transmissive layer.
20. The interferometric modulator device of claim 17 , wherein the second partially reflective and partially transmissive means includes a second partially reflective and partially transmissive layer.
21. A method of manufacturing an interferometric modulator device, the method comprising:
providing an absorber layer;
providing an interferometric reflector, the interferometric reflector being configured to move in a direction generally perpendicular to the absorber layer and including:
a first partially reflective and partially transmissive layer,
a second partially reflective and partially reflective layer fixed relative to the first partially reflective and partially transmissive layer, and
a first interferometric cavity disposed between the first partially reflective and partially transmissive layer and the second partially reflective and partially reflective layer,
wherein the interferometric reflector is configured to transmit a certain, spectrum of light at a transmission peak wavelength such that the interferometric modulator device has a diminished reflectance at the transmission peak wavelength; and
positioning the interferometric reflector relative to the absorber layer to create a second interferometric cavity between at least a portion of the interferometric reflector and at least a portion of the absorber layer.
22. An interferometric modulator comprising an interferometric reflector, an absorber layer, and a first interferometric cavity defined between the absorber layer and the interferometric reflector, wherein the interferometric reflector is configured to move in a direction generally perpendicular to the absorber layer wherein the interferometric reflector includes: a first reflective surface; a second reflective surface; and a second interferometric cavity defined by the first reflective surface and the second reflective surface.
23. The interferometric modulator of claim 22 , wherein the first reflective surface is partially reflective.
24. The interferometric modulator of claim 22 , wherein the second reflective surface is partially reflective.
25. The interferometric modulator of claim 22 , wherein the first reflective surface and the second reflective surface are fixed relative to each other.
26. The interferometric modulator of claim 22 , wherein the first reflective surface includes a material selected from a group consisting of aluminum, gold, silver, molybdenum, chromium, copper, nickel, and combinations thereof.
27. The interferometric modulator of claim 22 , wherein the second reflective surface includes a material selected from a group consisting of aluminum, gold, silver, molybdenum, chromium, copper, nickel, and combinations thereof.
28. The interferometric modulator of claim 22 , wherein the first reflective surface and the second reflective surface each have a thickness, the thickness of the first reflective surface being about the same as the thickness of the second reflective surface.
29. The interferometric modulator of claim 22 , wherein the second interferometric cavity includes air.
30. The interferometric modulator of claim 22 , wherein the second interferometric cavity includes a generally transparent dielectric.
31. The interferometric modulator of claim 30 , wherein the second interferometric cavity includes silicon oxy-nitride (SiON).
32. The interferometric modulator of claim 22 , wherein the interferometric reflector is configured to transmit a certain spectrum of light at a transmission peak wavelength such that the interferometric modulator has a diminished reflectance of light at the transmission peak wavelength.
33. The interferometric modulator of claim 32 , wherein the transmission peak wavelength is between about 380 nm and about 750 nm.
34. The interferometric modulator of claim 32 , wherein the amount of light transmitted by the interferometric reflector is less than about 5% of the reflectance of the interferometric modulator.
35. The interferometric modulator of claim 22 , wherein the interferometric reflector is configured to move between at least two positions.
36. The interferometric modulator of claim 22 , wherein the first interferometric cavity includes air.
37. The interferometric modulator of claim 22 , wherein the first interferometric cavity includes a generally transparent dielectric.
38. The interferometric modulator of claim 37 , wherein the first interferometric cavity includes silicon oxy-nitride.
39. The interferometric modulator of claim 22 , wherein the absorber layer includes a material selected from a group consisting of molybdenum, titanium, tungsten, chromium, molybdenum chromium, lead selenide, and combinations thereof.
40. The interferometric modulator of claim 22 , further comprising a substrate layer disposed such that the absorber layer is between the substrate layer and the interferometric reflector.
41. The interferometric modulator of claim 40 , wherein the substrate layer includes glass.