Directionally recrystallized graphene growth substrates
Implementations and techniques for producing substrates suitable for growing graphene monolayers are generally disclosed.
1. A method comprising:
forming a metal layer on a substrate;
forming a layer of dielectric material on the metal layer; and
directionally recrystallizing the metal layer to form a recrystallized metal layer suitable for growing a graphene monolayer, wherein the graphene monolayer has a length of about fifteen microns or greater.
2. The method of claim 1 , further comprising:
removing the layer of dielectric material; and
forming the graphene monolayer on the directionally recrystallized metal layer.
3. The method of claim 2 , wherein forming the graphene monolayer on the recrystallized metal layer comprises performing chemical vapor deposition (CVD) using a hydrocarbon gas mixture.
4. The method of claim 1 , wherein directionally recrystallizing the metal layer comprises using a laser to melt at least a portion of the metal layer.
5. The method of claim 1 , further comprising polishing the metal layer before forming the layer of dielectric material on the metal layer.
6. The method of claim 1 , wherein the metal layer comprises one or more of nickel (Ni), ruthenium (Ru) and/or copper (Cu).
7. The method of claim 1 , wherein the metal layer comprises a copper (Cu) layer and wherein the method further comprises:
forming a nickel (Ni) adhesion layer on the substrate; and
forming the copper (Cu) layer on the nickel (Ni) adhesion layer.
8. The method of claim 1 , wherein the layer of dielectric material comprises silicon dioxide (SiO 2 ).
9. The method of claim 1 , wherein the substrate comprises a controlled thermal expansion substrate coated with silicon dioxide (SiO 2 ).
10. The method of claim 9 , wherein the controlled thermal expansion substrate has a thermal expansion coefficient of about 0.5×10 −6 /K or more.
11. A device comprising:
a layer of dielectric material adjacent a substrate; and
a directionally recrystallized metal layer adjacent the layer of dielectric material, wherein the directionally recrystallized metal layer comprises a metal layer suitable for growing a graphene monolayer, wherein the graphene monolayer has a length of about fifteen microns or greater.
12. The device of claim 11 , wherein the graphene monolayer is adjacent the directionally recrystallized metal layer.
13. The device of claim 11 , wherein the directionally recrystallized metal layer comprises a metal layer directionally recrystallized by laser directional solidification.
14. The device of claim 11 , wherein the directionally recrystallized metal layer comprises one or more of nickel (Ni), ruthenium (Ru) and/or copper (Cu).
15. The device of claim 11 , wherein the substrate comprises a controlled thermal expansion substrate coated with silicon dioxide (SiO 2 ).
16. A system comprising:
one or more devices configured to:
form a metal layer on a substrate;
form a dielectric layer on the metal layer; and
directionally recrystallize the metal layer to form a metal layer suitable for growing a graphene monolayer, wherein the graphene monolayer has a length of at least about fifteen microns.
17. The system of claim 16 wherein the one or more devices are further configured to:
remove the dielectric layer; and
form the graphene monolayer on the directionally recrystallized metal layer.
18. The system of claim 16 , wherein the one or more devices are configured to directionally recrystallize the metal layer by applying laser directional solidification to the metal layer.
19. The system of claim 16 , wherein the metal layer comprises one or more of nickel (Ni), ruthenium (Ru) and/or copper (Cu).
20. The system of claim 16 , wherein the substrate comprises a controlled thermal expansion substrate.