In-situ foam materials as integrated heat spreader (IHS) sealant
An integrated heat spreader (IHS) lid over a semiconductor die connected to a substrate forms a cavity. A bead of foaming material may be placed within the IHS cavity. During an IHS cure and reflow process the foaming material will expand and fill the IHS cavity and the foam's shape conforms to the various surface features present, encapsulating a thermal interface material (TIM) material, and increasing contact area of the foam sealant.
1. An apparatus, comprising:
a semiconductor die disposed on a substrate;
a thermal interface material (TIM) disposed over the semiconductor die;
an integrated heat spreader (IHS) forming a lid over the TIM and the semiconductor die, the IHS forming a cavity between the substrate and the ISH; and
a foamed material substantially filling the cavity.
2. The apparatus as recited in claim 1 , wherein the foamed material comprises any one of silicone foams, urethane foams, vinyl acetate foams, and foamable polymers.
3. The apparatus as recited in claim 1 wherein the foamed material substantially conforms to surface features within the cavity.
4. The apparatus as recited in claim 1 further comprising a lip on an edge of the IHS projecting downward towards the substrate to contain the foamed material.
5. The apparatus as recited in claim 1 , further comprising die side components (DSCs) within the cavity, the foamed material substantially conforming to the shape of the DSCs.
6. The apparatus are recited in claim 1 further comprising underfill material between the semiconductor die and the substrate.
7. The apparatus as recited in claim 6 wherein the foamed material originated as a bead of unfoamed material placed on either or both of the substrate and the underfill material.
8. A system, comprising:
a semiconductor die electrically connected to a substrate with solder bumps;
an underfill material between the semiconductor die and the substrate encompassing the solder bumps;
a thermal interface material (TIM) disposed over the semiconductor die;
an integrated heat spreader (IHS) forming a lid over the TIM and the semiconductor die, the IHS forming a cavity between the substrate and the ISH;
a heat sink connected to the IHS; and
a foamed material substantially filling the cavity.
9. The system as recited in claim 8 wherein the foaming material comprises any one of silicone foams, urethane foams, vinyl acetate foams, and foamable polymers.
10. The system as recited in claim 8 further comprising die side components (DSCs) within the cavity, the foamed material substantially conforming to the shape of the DSCs.
11. The system as recited in claim 8 further comprising a lip on an edge of the IHS projecting downward towards the substrate to contain the foamed material.
12. The system as recited in claim 8 wherein the foamed material originated as a bead of unfoamed material placed on either or both of the substrate and the underfill material.
13. The system as recited in claim 8 wherein the foamed material originates as a bead of unfoamed material placed on either or both of the substrate and the underfill material.