Semiconductor device
A semiconductor device ( 1 ) includes a wiring ( 10 ) and dummy conductor patterns ( 20 ). The wiring ( 10 ) is a wiring through which a current with a frequency of 5 GHz or higher flows. Near the wiring ( 10 ), the dummy conductor patterns ( 20 ) are formed. A planar shape of each of the dummy conductor patterns ( 20 ) is equivalent to a shape with an internal angle larger than 180°.
1. A semiconductor device, comprising:
an inductor;
a plurality of first dummy conductor patterns arranged regularly in a first region; and
a plurality of second dummy conductor patterns arranged regularly in a second region far from the inductor as compared with the first region,
wherein the inductor, the first dummy conductor patterns and the second dummy conductor patterns are formed in the same layer,
wherein a planar shape the first dummy conductor pattern is different from a planar shape the second dummy conductor pattern.
2. The semiconductor device according to claim 1 ,
wherein the first region is arranged in an outer region of the inductor, and
wherein the second region is arranged, in the outer region of the inductor, far from the inductor as compared with the first region.
3. The semiconductor device according to claim 1 ,
wherein the planar shape the first dummy conductor pattern is smaller than the planar shape the second dummy conductor pattern.
4. The semiconductor device according to claim 1 ,
wherein the first region is arranged in an inner region of the inductor, and
wherein the second region is arranged, in an outer region of the inductor.
5. The semiconductor device according to claim 1 ,
wherein a high frequency signal flows through the inductor.
6. The semiconductor device according to claim 5 ,
wherein a frequency signal having a frequency of 5 GHz or higher flows through the inductor.
7. The semiconductor device according to claim 1 ,
wherein the first dummy patterns are arranged in a matrix state.
8. The semiconductor device according to claim 1 ,
wherein the second dummy patterns are arranged in a matrix state.
9. The semiconductor device according to claim 1 ,
wherein a data ratio in the first region where the first dummy conductor patterns are located is smaller than a data ratio in the second region where the second dummy conductor patterns are located.