Photoelectric conversion apparatus and imaging system using the same
A photoelectric conversion apparatus of the present invention includes a first semiconductor region functioning as a barrier against signal charges between a first and a second photoelectric conversion element, and a second semiconductor region that has a width narrower than that of the first semiconductor region and functions as a barrier against signal charges between a first and the third photoelectric conversion element. A region with a low barrier is provided at least a part between the first and the second photoelectric conversion element.
1. A photoelectric conversion apparatus comprising:
a substrate;
a plurality of photoelectric conversion elements arranged on the substrate; and
a transistor arranged on the substrate for transferring a signal charge generated by the photoelectric conversion element, wherein
the plurality of photoelectric conversion elements include a first photoelectric conversion element, a second photoelectric conversion element adjacent to the first photoelectric conversion element and a third photoelectric conversion element adjacent to the first photoelectric conversion element, and
a first region having a first width is arranged between the first and second photoelectric conversion elements,
a second region having a second width narrower than the first width is arranged between the first and third photoelectric conversion elements,
a first semiconductor region of a first conductivity type such that the signal charge is minority carrier and of a third width is arranged in the first region,
a second semiconductor region of the first conductivity type and of a fourth width narrower than the third width is arranged in the second region, and
a third region having a potential as to the signal charge lower than first semiconductor region is arranged in the first region.
2. The photoelectric conversion apparatus according to claim 1 , wherein
a third semiconductor region of the first conductivity type and of a fifth width narrower than the fourth width is arranged in the third region.
3. The photoelectric conversion apparatus according to claim 1 , wherein
a third semiconductor region of the first conductivity type and of an impurity concentration lower than that of the second semiconductor region is arranged in the third region.
4. The photoelectric conversion apparatus according to claim 1 , wherein
a third semiconductor region of the first conductivity type is arranged in the third region at a depth shallower than a depth of the second semiconductor region.
5. The photoelectric conversion apparatus according to claim 1 , wherein
a third semiconductor region of the first conductivity type, of a fifth width narrower than the fourth width and of an impurity concentration lower than that of the second semiconductor region.
6. An imaging system comprising:
the photoelectric conversion apparatus according to claim 1 ; and
a signal processing circuit for processing a signal outputted from the photoelectric conversion apparatus.