Solid-state image sensor and method of manufacturing the same
According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.
1. A solid-state image sensor comprising:
a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface;
a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal;
a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region;
a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit; and
a support substrate formed on the stacked interlayer insulating films and the interconnects;
an electrode provided in the semiconductor substrate and extending through the peripheral region from the first surface to the second surface, one end of the electrode connected to a pad on the first surface and an other end of the electrode connected to the circuit on the second surface; and
at least one of dummy layers formed in the plurality of interlayer insulating films stacked on the second surface, and not connected to the circuit, the dummy layers provided in a low-coverage region in the interlayer insulating films above at least one of the pixel region and a peripheral region,
wherein an uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film,
wherein an uppermost one of the dummy layer formed in the uppermost interlayer insulating film is buried in a second trench formed in the uppermost interlayer insulating film, and
wherein a material used as the uppermost interconnect and the uppermost dummy layer are selected from the group consisting of copper and an alloy of copper.
2. The sensor according to claim 1 , wherein an upper surface level of the uppermost interconnect is equal to that of the uppermost interlayer insulating film.
3. The sensor according to claim 1 , wherein a material used as another interconnect is selected from the group consisting of copper and an alloy of copper.
4. The sensor according to claim 1 , wherein an upper surface level of the dummy layer is equal to that of the uppermost interlayer insulating film.
5. The sensor according to claim 1 , wherein a material used as an interconnect except for the uppermost interconnect is selected from the group consisting of aluminum and an alloy of aluminum.
6. The sensor according to claim 1 , further comprising a lens formed on the first surface in the pixel region.
7. The sensor according to claim 1 , wherein a material used as the pad is selected from the group consisting of aluminum and an alloy of aluminum.
8. The sensor according to claim 1 , wherein the dummy layer is provided in the low-coverage region so as to satisfy a predetermined coverage in the uppermost interlayer insulating film.