IP Library › Granted Patent US 8,519,795
Granted Patent B2
US 8,519,795 · App. 13/428,580 · Granted Aug 27, 2013

High frequency power amplifier

Inventors: Shintaro Watanabe (Tokyo, JP); Kazuhiro Iyomasa (Tokyo, JP); Hiroaki Maehara (Tokyo, JP); Jun Takaso (Tokyo, JP)
Assignee: Mitsubishi Electric Corporation
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Quick Facts
Patent No.
US 8,519,795
App. No.
13/428,580
Granted
Aug 27, 2013
Kind
B2
Abstract

A high frequency power amplifier includes: a first transistor for amplifying an input high-frequency signal; a second transistor for amplifying an output signal of the first transistor; a third transistor connected in parallel with the first transistor and for amplifying the input high-frequency signal; a first switching element connected between an output of the first transistor and an input of the second transistor; a second switching element connected between an output of the third transistor and the first switching element; third and fourth switching elements connected in series between the output of the first transistor and an output of the second transistor, and between the second switching element and the output of the second transistor; and a first capacitor connected between the third switching element and the fourth switching element.

Claims (13)

1. A high frequency power amplifier comprising:

a first transistor for amplifying an input high-frequency signal;

a second transistor for amplifying an output signal of the first transistor;

a third transistor connected in parallel with the first transistor and for amplifying the input high-frequency signal;

a first switching element connected between an output of the first transistor and an input of the second transistor;

a second switching element connected between an output of the third transistor and the first switching element;

third and fourth switching elements connected in series between the output of the first transistor and an output of the second transistor, and between the second switching element and the output of the second transistor; and

a first capacitor connected between the third switching element and the fourth switching element.

2. The high frequency power amplifier according to claim 1 , wherein a first end of the first capacitor is connected to a connecting point between the third switching element and the fourth switching element, and a second end of the first capacitor is grounded.

3. The high frequency power amplifier according to claim 1 , wherein a first end of the first capacitor is connected to the third switching element, and a second end of the first capacitor is connected to the fourth switching element.

4. The high frequency power amplifier according to claim 1 , further comprising an inductor connected in series with the first capacitor between the third switching element and the fourth switching element.

5. The high frequency power amplifier according to claim 1 , further comprising a second capacitor connected in parallel with the fourth switching element and between the output of the second transistor and the first capacitor.

6. The high frequency power amplifier according to claim 1 , further comprising a fifth switching element and a second capacitor connected in series between the output of the second transistor and a grounding point.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2017
From: MITSUBISHI ELECTRIC CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 040839/0688 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 8, 2012
From: WATANABE, SHINTARO; IYOMASA, KAZUHIRO; MAEHARA, HIROAKI; TAKASO, JUN
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 028345/0646 →
Priority Claims (1)
JP 2011-112224 · May 19, 2011 · national
Continuity (1)
Related Publication 20120293257A1 · Nov 22, 2012