RF-MEMS capacitive switches with high reliability

1. A radio frequency microelectromechanical systems (RF-MEMS) capacitive switch, moveable from an “off state” to an “on state” in a short switching time and comprising:

a lower electrode;

a membrane providing an upper electrode positioned above said lower electrode, said membrane being spaced from said lower electrode in the “off state”;

a “fast discharge diamond dielectric layer” on said lower electrode having a discharging time substantially less than said switching time; and

said membrane contacting said “fast discharge diamond dielectric layer” when a voltage is applied across the electrodes in the on state.

2. A RF-MEMS capacitive switch in accordance with claim 1 wherein said “fast discharge diamond dielectric layer” comprises a film with fast discharge characteristics.

3. A RF-MEMS capacitive switch in accordance with claim 1 wherein said “fast discharge diamond dielectric layer” comprises an insulating layer.

4. A RF-MEMS capacitive switch in accordance with claim 3 wherein said switch can recover quickly in a period of time ranging from 1 microsecond to 100 microseconds from an accumulation of electrically charged particles on the layer.

5. A RF-MEMS capacitive switch in accordance with claim 1 wherein said RF-MEMS switch is operable for over 100 billion cycles.

6. A RF-MEMS capacitive switch in accordance with claim 1 wherein said “fast discharge diamond dielectric layer” comprises ultrananocrystalline diamond (UNCD), or nanocrystalline diamond (NCD), or microcrystalline diamond (MCD).

7. A RF-MEMS capacitive switch in accordance with claim 1 wherein said switch is prevented from failing due to rapid discharging of said “fast discharge diamond dielectric layer”.

8. A RF-MEMS capacitive switch in accordance with claim 1 wherein said discharging time is less than 50-100 microseconds.

9. A RF-MEMS capacitive switch in accordance with claim 1 wherein said “fast discharge diamond dielectric layer” has a grain size of about 3nm to about 5nm, or 10 nm to 900 nm, or ≧than 1 mirometer.

10. A RF-MEMS capacitive switch in accordance with claim 1 wherein said “fast discharge diamond dielectric layer” is chemically inert and hydrophobic to substantially prevent tribiological interaction of said membrane with said dielectric layer.

11. A radio frequency microelectromechanical system (RF-MEMS) capacitive switch moveable from an “off” position to an “on” position and comprising:

a lower electrode comprising a RF signal path;

a moveable metal membrane providing upper electrode, selected from the group consisting of

(a) a RF ground and a direct current (DC) ground, said membrane positioned above said lower electrode, and said membrane being spaced from said lower electrode by an air gap in the off position; and

(b) a RF ground and a direct current (DC) ground, positioned above said movable membrane;

a dielectric layer comprising a “fast discharge diamond dielectric layer”, said layer being ultrananocrystalline diamond (UNCD), or nanocrystalline diamond (NCD), or microcrystalline diamond (MCD);

said membrane contacting said dielectric layer when a voltage is applied across the lower and upper electrodes in the on position;

said membrane cooperating with said dielectric layer and lower electrode to form a metal-insulator-metal (MIM) capacitor in the on position; and

said RF-MEMS capacitive switch provides a reliable long-life switch that is operable for at least 100 billion cycles.

12. A RF-MEMS capacitive switch in accordance with claim 11 wherein said switch has sufficient capacitive conductance to capacitively couple or short the RF switch path of said lower electrode to said membrane.

13. A RF-MEMS capacitive switch in accordance with claim 12 wherein said bottom electrode comprises tungsten (W), gold (Au), copper (Cu), aluminum (Al) or any other metal with higher electrical conductivity, including an appropriate atoms diffusion barrier (e.g., TiAl, TiN) to avoid diffusion of metal atoms towards the diamond layer, when growing the diamond layer on top.

14. A radio frequency microelectromechanical (RF-MEMS) capacitive switch, moveable for a switching time from an “off ” position in an “off-state”to an “on” position in an “on-state”, comprising:

a bottom electrode comprising metal providing an RF signal path;

a moveable metallic membrane providing a top electrode, selected from the group consisting of

(a) an RF ground and a direct current (DC) ground said membrane being less than about 0.4 μm thick, said membrane being spaced from said bottom electrode by an air gap of about 2 microns to about 10 microns resulting in a substantially insignificant capacitance relative to an operating frequency of said switch;

(b) an RF ground and a direct current (DC) ground, positioned above said membrane;

a dielectric film with “fast discharge characteristics, providing a “fast discharge diamond dielectric layer” with insulating characteristics on said bottom electrode, said “fast discharge diamond dielectric layer” comprising ultrananocrystalline diamond (UNCD), or nanocrystalline diamond (NCD), or microcrystalline diamond (MCD); said film having a discharging and recovery time substantially less than said switching time for substantially discharging an accumulated charge within 50 microseconds;

said membrane contacting said “fast discharge diamond dielectric layer” when a voltage of about 30 volts to about 50 volts is applied across said top and bottom electrodes in the on state;

said membrane cooperating with said “fast discharge diamonddielectric layer” and said bottom electrode to form a metal-insulator-metal (MIM) capacitor in the on state; and

said RF-MEMS capacitive switch comprises a reliable long-life switch that is operable for more than 100 billion cycles.

15. A RF-MEMS capacitive switch in accordance with claim 14 wherein said “fast discharge diamond dielectric layer” has a charging time constant of about 100 microseconds.

16. A RF-MEMS capacitive switch in accordance with claim 14 wherein said membrane is selected from the group consisting of molybdenum (Mo), tungsten (W), aluminum (Al), titanium (Ti) or any other metal with suitable mechanical and tribological properties.

17. A RF-MEMS capacitive switch in accordance with claim 14 including:

a silicon on sapphire (SOS) substrate positioned below said bottom electrode; and at least one post extending between said membrane and said SOS Substrate;

a silicon on sapphire (SOS)-CMOS device arrangement substrate positioned below said bottom electrode to enable monolithical integration of said RF-MEMS switches with said CMOS devices to enable actuation of the RF-MEMS switches by the CMOS devices.