Measurement of critical dimensions of semiconductor wafers
View Patent ↗A semiconductor wafer critical dimension measurement method comprising receiving an image of a site of the semiconductor wafer comprising a plurality of features, processing the image to measure at least one critical dimension of at least some of the features, analyzing the critical dimension of each feature and determining the feature to be a non-defective feature or a defective feature, and using the critical dimension of at least some of any non-defective features as a measure of the critical dimension of features of the semiconductor wafer.
1. A semiconductor wafer critical dimension measurement method, comprising
receiving an image of a site of the semiconductor wafer comprising a plurality of features,
processing the image to measure at least one critical dimension of at least some of the features,
analysing, by a processor, the critical dimension of each feature and determining the feature to be a non-defective feature or a defective feature, and
using the critical dimensions of at least some of any non-defective features as a measure of the critical dimensions of features of the semiconductor wafer,
using the measure of the critical dimensions of features of the semiconductor wafer to control fabricating the wafer,
wherein analysing the critical dimension of a feature and determining the feature to be a non-defective feature or a defective feature, comprises comparing the critical dimension of the feature with the critical dimensions of a plurality of other features and determining the feature to be a non-defective feature if the critical dimension of the feature is substantially equal to the critical dimensions of a majority of the other features, and determining the feature to be a defective feature if the critical dimension of the feature is not substantially equal to the critical dimensions of a majority of the other features.
2. A method as claimed in claim 1 , wherein the site is a site reviewed in a defect review in a fabrication process of the wafer, and the image of the site is produced in the defect review.
3. A method as claimed in claim 1 , wherein the site is a site which has been pre-chosen for critical dimension measurement.
4. A method as claimed in claim 1 , wherein processing the image to measure the critical dimension of at least some of the features comprises drawing a contour around each feature, determining the critical dimension of the contour, and using this as a measurement of the critical dimension of the feature.
5. A method as claimed in claim 1 , wherein the image is processed to measure the critical dimension of at least some features which are completely contained in the image.
6. A method as claimed in claim 1 , wherein analysing the critical dimension of a feature and determining the feature to be a non-defective feature or a defective feature, further comprises comparing the critical dimension of the feature with a pre-defined critical dimension range, and determining the feature to be a non-defective feature if the critical dimension of the feature lies within the pre-defined critical dimension range, and determining the feature to be a defective feature if the critical dimension of the feature lies outside the pre-defined critical dimension range.
7. A method as claimed in claim 1 , wherein using the critical dimensions of at least some of any non-defective features as a measure of the critical dimensions of features of the semiconductor wafer, comprises calculating an average critical dimension of the non-defective features and using the average critical dimension as a measure of the critical dimensions of features of the semiconductor wafer.
8. A method as claimed in claim 7 , comprising, for each of a plurality of sites of the wafer, calculating an average critical dimension of the non-defective features of the site, and using the average critical dimension of the sites as a measure of the critical dimensions of features of the semiconductor wafer.
9. A method as claimed in claim 7 , wherein the at least one critical dimension which is measured comprises any of the width, height, shape, topographic features, line edge roughness, volume of a feature of the wafer.
10. A semiconductor wafer critical dimension measurement system, comprising
a receiver which receives an image of a site of the semiconductor wafer comprising a plurality of features,
a processor which processes the image to measure at least one critical dimension of at least some of the features,
an analyser which analyses the critical dimension of each feature, determines the feature to be a non-defective feature or a defective feature, and uses the critical dimension of at least some of any non-defective features as a measure of the critical dimension of features of the semiconductor wafer, wherein analysing the critical dimension of a feature and determining the feature to be a non-defective feature or a defective feature, comprises comparing the critical dimension of the feature with the critical dimensions of a plurality of other features and determining the feature to be a non-defective feature if the critical dimension of the feature is substantially equal to the critical dimensions of a majority of the other features, and determining the feature to be a defective feature if the critical dimension of the feature is not substantially equal to the critical dimensions of a majority of the other features.
11. A method as claimed in claim 2 , wherein processing the image to measure the critical dimension of at least some of the features comprises drawing a contour around each feature, determining the critical dimension of the contour, and using this as a measurement of the critical dimension of the feature.
12. A method as claimed in claim 2 , wherein the image is processed to measure the critical dimension of at least some features which are completely contained in the image.
13. A method as claimed in claim 4 , wherein the image is processed to measure the critical dimension of at least some features which are completely contained in the image.
14. A method as claimed in claim 4 , wherein analysing the critical dimension of a feature and determining the feature to be a non-defective feature or a defective feature, further comprises comparing the critical dimension of the feature with a pre-defined critical dimension range, and determining the feature to be a non-defective feature if the critical dimension of the feature lies within the pre-defined critical dimension range, and determining the feature to be a defective feature if the critical dimension of the feature lies outside the pre-defined critical dimension range.
15. A method as claimed in claim 4 , wherein the at least one critical dimension which is measured comprises any of the width, height, shape, topographic features, line edge roughness, volume of a feature of the wafer.
16. A method as claimed in claim 5 , wherein the at least one critical dimension which is measured comprises any of the width, height, shape, topographic features, line edge roughness, volume of a feature of the wafer.
17. A method as claimed in claim 5 , wherein analysing the critical dimension of a feature and determining the feature to be a non-defective feature or a defective feature, further comprises comparing the critical dimension of the feature with a pre-defined critical dimension range, and determining the feature to be a non-defective feature if the critical dimension of the feature lies within the pre-defined critical dimension range, and determining the feature to be a defective feature if the critical dimension of the feature lies outside the pre-defined critical dimension range.
18. A method as claimed in claim 6 , wherein using the critical dimensions of at least some of any non-defective features as a measure of the critical dimensions of features of the semiconductor wafer, comprises calculating an average critical dimension of the non-defective features and using the average critical dimension as a measure of the critical dimensions of features of the semiconductor wafer.
19. A method as claimed in claim 1 , wherein using the measure of the critical dimensions of the features of the semiconductor wafer to control fabricating the wafer includes scrapping a wafer, stopping the fabrication process, or processing a wafer using a changed fabrication process parameter.
20. A method as claimed in claim 19 , wherein using the measure of the critical dimensions of the features of the semiconductor wafer to control fabricating the wafer includes processing a wafer using a changed fabrication process parameter.