IP Library Granted Patent US 8,532,584
Granted Patent B2
US 8,532,584 · App. 12/771,339 · Granted Sep 10, 2013

RF switches

Inventor: Denis A. Masliah (St.-Germain en Laye, FR)
Assignee: ACCO Semiconductor, Inc.
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Quick Facts
Patent No.
US 8,532,584
App. No.
12/771,339
Granted
Sep 10, 2013
Kind
B2
Abstract

RF switching devices are provided that alternatively couple an antenna to either a transmitter amplifier or a receiver amplifier. An exemplary RF switching device comprises two valves, one for a receiver transmission line between the antenna and the receiver amplifier, the other for a transmitter transmission line between the antenna and the power amplifier. Each valve is switchably coupled between ground and its transmission line. When coupled to ground, current flowing through the valve increases the impedance of the transmission line thereby attenuating signals on the transmission line. When decoupled from ground, the impedance of the transmission line is essentially unaffected. The pair of valves is controlled such that when one valve is on the other valve is off, and vice versa, so that the antenna is either receiving signals from the power amplifier or the receiver amplifier is receiving signals from the antenna.

Claims (19)

1. An article of manufacture comprising:

a power amplifier;

a receiver amplifier;

a first transmission line extending between the power amplifier and an antenna port;

a second transmission line extending between the receiver amplifier and the antenna port;

a first valve configured to change an impedance of the first transmission line; and

a second valve configured to change an impedance of the second transmission line;

the first and second valves being controllable such that when one is open the other is closed.

2. The article of manufacture of claim 1 further comprising an antenna coupled to the antenna port.

3. The article of manufacture of claim 1 further comprising control logic configured to oppositely control the first and second valves.

4. The article of manufacture of claim 1 wherein the first valve includes a double-gate semiconductor device.

5. The article of manufacture of claim 1 wherein the first transmission line includes a transmission line segment and the first valve includes

a first line joined to the first transmission line at a node and including a first line segment disposed along the segment of the transmission line,

a second line joined to the first transmission line at the node and including a second line segment disposed along the segment of the transmission line, and

a switch configured to couple and decouple the first and second lines to and from ground.

6. The article of manufacture of claim 5 wherein the switch includes a double-gate semiconductor device.

7. The article of manufacture of claim 2 wherein the article of manufacture does not include a filter between the power amplifier and the antenna to remove harmonics of a primary frequency.

8. The article of manufacture of claim 1 wherein the first valve has an insertion loss of less than 0.5 dB.

9. The article of manufacture of claim 1 wherein an isolation provided by the first valve is at least 22 dB at the primary frequency of the power amplifier.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2021
From: SOMOS SEMICONDUCTOR SAS
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 055220/0856 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 10, 2020
From: ACCO
To: SOMOS SEMICONDUCTOR
Reel/Frame 053178/0925 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2015
From: ACCO SEMICONDUCTOR INC.
To: ACCO
Reel/Frame 037370/0275 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 30, 2010
From: MASLIAH, DENIS A.
To: ACCO SEMICONDUCTOR, INC.
Reel/Frame 024318/0647 →
Continuity (1)
Related Publication 20110269419A1 · Nov 3, 2011