Fabric containing non-crimped fibers and methods of manufacture
A chemical-mechanical planarization pad for semiconductor manufacturing is provided. The pad comprises synthetic fibers that are non-crimped fibers which are present in an amount of 1.0% by weight to 98.0% by weight in the mat and wherein the non-crimped fibers have a length of 0.1 cm to 127 cm and a diameter of 1.0 to 1000 micrometers.
1. A polishing pad for chemical-mechanical planarization of semiconductors comprising:
a nonwoven fabric comprising a mat containing synthetic fibers, wherein said fibers are non-crimped fibers wherein said non-crimped fibers are present in an amount of 1.0% by weight to 98.0% by weight in said mat and wherein said non-crimped fibers have a length of 0.1 cm to 127 cm and a diameter of 1.0 to 1000 micrometers;
wherein said non-crimped fibers are at least partially soluble in aqueous solution; and
wherein the at least partially soluble fibers are embedded in a polymer matrix worn away during use of the pad.
2. The polishing pad of claim 1 , wherein said non-crimped fibers comprise two fibers, one of which has a first degree of solubility (S1) in a slurry, one of which has a second degree of solubility (S2) in a slurry, wherein S 1 is less than S 2 .
3. The polishing pad of claim 1 , wherein said non-crimped fibers are mechanically entangled.
4. The polishing pad of claim 1 , wherein said non-crimped fibers are thermally or chemically bonded to one another.
5. The polishing pad of claim 1 , wherein said non-crimped fibers are present in said mat at a level of 50.0% by weight to 90% by weight and said mat includes crimped fibers present at a level of 10% by weight to 50% by weight.
6. The polishing pad of claim 1 , wherein said non-crimped fibers have a diameter of 5.0 micrometers to 50.0 micrometers.
7. A polishing pad for chemical mechanical planarization of semiconductors comprising:
a nonwoven fabric comprising a mat containing synthetic fibers, wherein said fibers are non-crimped fibers wherein said non-crimped fibers are present in an amount of 1.0% by weight to 98.0% by weight in said mat and wherein said non-crimped fibers have a length of 0.1 cm to 127 cm and a diameter of 1.0 to 1000 micrometers, and wherein said non-crimped fibers are at least partially soluble in an aqueous solution;
wherein said non-crimped at least partially soluble fibers comprises two fibers, one of which has a first degree of solubility in said aqueous solution (S1), one of which has a second degree of solubility in said aqueous solution (S2), wherein S 1 is less than S 2 ; and
wherein the at least partially soluble fibers are embedded in a polymer matrix worn away during use of the pad.
8. The polishing pad of claim 7 , wherein said pad includes non-soluble fiber, wherein said non-soluble fiber comprises crimped fiber and/or non-crimped fiber.
9. The polishing pad of claim 7 , wherein said non-crimped at least partially soluble fibers are present at a level of 50% by weight to 98% by weight.
10. The polishing pad of claim 7 , wherein said non-crimped at least partially soluble fibers are mechanically entangled.
11. The polishing pad of claim 7 , wherein said non-crimped at least partially soluble fibers are thermally or chemically bonded to one another.
12. The polishing pad of claim 7 , wherein said non-crimped at least partially soluble fibers are present in said mat at a level of 50.0% by weight to 90% by weight and said mat includes crimped fibers present at a level of 10% by weight to 50% by weight.
13. The polishing pad of claim 7 , wherein said non-crimped at least partially soluble fibers have a diameter of 5.0 micrometers to 50.0 micrometers.
14. The polishing pad of claim 7 , wherein said non-crimped at least partially soluble fibers are selectively positioned in said mat, wherein said position comprises that portion of the polishing pad that is configured to contact a polishing slurry.
15. A method for chemical-mechanical planarization of semiconductors comprising:
supplying a nonwoven fabric comprising a mat containing synthetic fibers, wherein said fibers are non-crimped fibers wherein said non-crimped fibers are present in an amount of 1.0% by weight to 98.0% by weight in said mat and wherein said non-crimped fibers have a length of 0.1 cm to 127 cm and a diameter of 1.0 to 1000 micrometers, wherein said non-crimped fibers are at least partially soluble in aqueous solution;
embedding the at least partially soluble fibers in a polymer matrix to provide a polishing pad, wherein the polymer matrix is worn away during use of the pad; and
polishing a semiconductor with said polishing pad.
16. The method of claim 15 , further including:
supplying a slurry for polishing wherein said slurry is in liquid form; and
positioning said fabric containing said fibers including said non-crimped fibers on a polishing tool for polishing a semiconductor.
17. The method of claim 15 , wherein said non-crimped fibers are present in an amount of 50.0% by weight to 90.0% by weight in said non-woven mat.
18. The method of claim 15 , wherein said non-crimped fibers have a diameter of 5.0 to 50.0 micrometers.
19. The method of claim 15 , wherein said non-crimped fibers comprise two fibers, one of which has a first degree of solubility (S1) in said slurry, one of which has a second degree of solubility (S2) in said slurry, wherein S 1 is less than S 2 .
20. The method of claim 15 , wherein said non-crimped fibers are mechanically entangled.
21. The method of claim 15 , wherein said non-crimped fibers are thermally or chemically bonded to one another.
22. The method of claim 15 , wherein said non-crimped fibers are present in said mat at a level of 50.0% by weight to 90% by weight and said mat includes crimped fibers present at a level of 10% by weight to 50% by weight.