Quantum dot light emitting diode device and display device therewith
The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.
1. A quantum dot light emitting diode device comprising:
a cathode formed on a substrate, wherein the cathode is connected to a thin film transistor on the substrate;
an electron transport layer on the cathode, wherein the electron transport layer has a cross linkable structure;
a quantum dot light emitting layer formed on the electron transport layer, wherein the quantum dot light emitting layer is formed by a solution process;
a hole transport layer on the quantum dot light emitting layer; and
an anode formed on the hole transport layer.
2. The device as claimed in claim 1 , wherein the quantum dot light emitting layer includes a 2 group-6 group pair or 3 group-5 group pair nano-semiconductor compound.
3. The device as claimed in claim 2 , wherein the nano-semiconductor compound is any one selected from CdSe, CdS, CdTe, ZnSe, ZnTe, ZnS, HgTe, InAs, InP, and GaAs.
4. The device as claimed in claim 2 , wherein the electron transport layer further comprises any one selected from ZnO, TiO 2 , WO 3 , and SnO 2 .
5. The device as claimed in claim 2 , wherein the electron transport layer further comprises TPBI or TAZ.
6. The device as claimed in claim 1 , wherein the hole transport layer is formed of any one selected from CBP, α-NPD, TCTA and DNTPD.
7. The device as claimed in claim 1 , wherein the hole transport layer is formed of NiO, or MoO 3 .
8. A display device comprising:
a transparent cathode formed on a substrate;
an electron transport layer on the transparent cathode, wherein the electron transport layer has a cross linkable structure;
a quantum dot light emitting layer formed on the electron transport layer to include quantum dots, wherein the quantum dot light emitting layer is formed by a solution process;
a hole transport layer on the quantum dot light emitting layer;
an anode formed on the hole transport layer; and
a thin film transistor connected to the cathode.
9. A display device comprising:
a cathode formed on a substrate;
an electron transport layer on the cathode, wherein the electron transport layer has a cross linkable structure;
a quantum dot light emitting layer formed on the electron transport layer to include quantum dots, wherein the quantum dot light emitting layer is formed by a solution process;
a hole transport layer on the quantum dot light emitting layer;
a transparent anode formed on the hole transport layer; and
a thin film transistor connected to the cathode.
10. A display device comprising:
a cathode formed on a first substrate;
an electron transport layer on the cathode, wherein the electron transport layer has a cross linkable structure;
a quantum dot light emitting layer formed on the electron transport layer to include quantum dots, wherein the quantum dot light emitting layer is formed by a solution process;
a hole transport layer on the quantum dot light emitting layer;
a transparent anode formed on the hole transport layer;
a thin film transistor formed on the first substrate connected to the cathode; and
a second substrate opposite to the first substrate, the second substrate having a color filter layer.
11. A method for fabricating a quantum dot light emitting diode device comprising the steps of:
forming a cathode on a substrate, wherein the cathode is connected to a thin film transistor on the substrate;
forming an electron transport layer on the cathode, wherein the electron transport layer has a cross linkable structure;
forming a quantum dot light emitting layer on the electron transport layer by a solution process;
forming a hole transport layer on the quantum dot light emitting layer; and
forming an anode on the hole transport layer.
12. A method for fabricating a display device comprising the steps of:
forming a thin film transistor on a substrate;
forming a cathode on the substrate, connected to the thin film transistor;
forming an electron transport layer on the cathode, wherein the electron transport layer has a cross linkable structure;
forming a quantum dot light emitting layer filled with a plurality of quantum dots on the electron transport layer by a solution process;
forming a hole transport layer on the quantum dot light emitting layer; and
forming an anode on the hole transport layer.