Light emitting diode structure
A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.
1. A structure comprising:
a substrate layer;
an array of posts, wherein each of the posts has a height between 0.2-4 μm, and the array of posts and the substrate layer are integrally formed from a single piece of material comprising a polymer material;
a corresponding array of laterally separate metallization layers directly over the array of posts; and
a semiconductor device layer directly over the array of laterally separate metallization layers, wherein the semiconductor device layer has a uniform thickness across the substrate layer.
2. The structure of claim 1 , wherein each of the laterally separate metallization layers has a width of 1-100 μm scale.
3. The structure of claim 2 , wherein each of the posts has a width of 1-100 μm scale.
4. The structure of claim 1 , wherein the semiconductor device layer is a p-n diode layer.
5. The structure of claim 4 , wherein the p-n diode layer includes a p-doped layer, an n-doped layer, and a quantum well layer between the p-doped layer and the n-doped layer.
6. The structure of claim 5 , wherein quantum well layer is a multiple quantum well configuration.
7. The structure of claim 5 , wherein each of the laterally separate metallization layers makes ohmic contact with the p-n diode layer.
8. The structure of claim 5 , wherein each of the laterally separate metallization layers is reflective to light emission.
9. The structure of claim 5 , wherein each of the laterally separate metallization layers has a thickness of 0.1-2 μm.
10. The structure of claim 5 , wherein the quantum well layer has a thickness of less than approximately 0.3 μm.
11. The structure of claim 5 , wherein the p-doped layer has a thickness of approximately 0.1-1 μm.
12. The structure of claim 5 , wherein the n-doped layer has a thickness of approximately 0.1-6 μm.
13. The structure of claim 5 , wherein the p-n diode layer has a thickness of less than approximately 9.3 μm.
14. The structure of claim 1 , further comprising an array of laterally separate bonding layers between the array of posts and the array of laterally separate metallization layers.
15. The structure of claim 14 , wherein array of laterally separate bonding layers is formed of a metal or metal alloy.
16. The structure of claim 15 , wherein the array of laterally separate bonding layers is in direct contact with the array of posts and the array of laterally separate metallization layers.
17. The structure of claim 3 , comprising millions of posts in the array of posts.
18. The structure of claim 3 , comprising hundreds of millions of posts in the array of posts.
19. The structure of claim 1 , wherein the semiconductor device layer is designed to perform an electronic function.
20. The structure of claim 19 , wherein the semiconductor device layer comprises a device selected from the group consisting of a diode, transistor, and integrated circuit.
21. The structure of claim 1 , wherein the semiconductor device layer is designed to perform a photonic function.
22. The structure of claim 21 , wherein the semiconductor device layer comprises a device selected from the group consisting of a light emitting diode and laser.
23. The structure of claim 2 , wherein each metallization layer includes a bottom surface that is wider than a corresponding post top surface directly underneath the metallization layer.
24. The structure of claim 23 , wherein the semiconductor device layer is a p-n diode layer that includes a p-doped layer, an n-doped layer, and a quantum well layer between the p-doped layer and the n-doped layer.
25. The structure of claim 24 , wherein each of the laterally separate metallization layers makes ohmic contact with the p-n diode layer.
26. The structure of claim 25 , wherein each of the laterally separate metallization layers comprises an electrode layer that makes ohmic contact with the p-n diode layer, and a barrier layer between the ohmic layer and a corresponding post directly underneath the metallization layer.