Mono-layer and multi-layer nanowire networks
View Patent ↗Disclosed is a method for nanostructure synthesis that includes growing nanostructures on a layered structure compound at a low temperature using a solution containing a solvent and at least one precursor. The method can include synthesizing and assembling nanowires in essentially the same method step. Disclosed nanostructures and nanowires are substantially uniform in diameter and single crystal. Nanowires can intersect to form networks and can be covalently bonded at points of intersection. Disclosed nanowire networks can be substantially uniform and can form an ordered network. Nanowire networks can be used to fabricate electronic and optical devices.
1. A method for synthesizing a plurality of nanowires comprising CdX, wherein X is S or Se; bismuth in an atomic percentage that is between about 5% and about 20%; and iodide in an atomic percentage that is between about 3% and about 10%, the method comprising:
depositing BiI 3 on a substrate;
contacting the substrate with a non-polar organic solvent and a first nanowire precursor selected from Cd(OAc) 2 , Cd(Cl) 2 , Cd(NO 3 ) 2 , or CdSO 4 ; and
contacting the substrate with a second nanowire precursor selected from sulfur or selenium.
2. The method according to claim 1 , wherein the plurality of nanowires from an ordered pattern.
3. The method according to claim 1 , wherein synthesizing the plurality of nanowires is carried out at atmospheric pressure.
4. The method according to claim 1 , wherein the BiI 3 nucleates growth of the plurality of nanowires.
5. The method according to claim 1 , wherein depositing BiI 3 on the substrate comprises:
forming BiI 3 flakes in a supersaturated solution thereby forming a supersaturated solution containing BiI 3 flakes; and
transferring a portion of the supersaturated solution containing BiI 3 flakes to the substrate surface.
6. The method according to claim 1 , wherein the plurality of nanowires are substantially uniform in diameter.
7. The method according to claim 1 , wherein the plurality of nanowires are substantially single crystal nanowires.
8. The method according to claim 1 , wherein a portion of the plurality of nanowires intersect at points of intersection to form a nanowire network.
9. The method according to claim 8 , wherein the portion of the plurality of nanowires that intersect at points of intersection forms covalent bonds at the points of intersection.
10. The method according to claim 8 , wherein the portion of the plurality of nanowires that intersect at points of intersection forms substantially 90° angles at the points of intersection.
11. The method according to claim 8 , wherein the portion of the plurality of nanowires that intersect at points of intersection is synthesized at substantially the same time.
12. The method according to claim 1 , wherein the plurality of nanowires have an average diameter between about 20 nm and about 60 nm.
13. The method according to claim 1 , wherein the plurality of nanowires are substantially straight.
14. A method, comprising:
providing a plurality of nanowires comprising CdX, wherein X is S or Se; bismuth in an atomic percentage that is between about 5% and about 20%; and iodide in an atomic percentage that is between about 3% and about 10%; and
removing at least a portion of a nanowire.
15. The method of claim 14 , wherein the plurality of nanowires form a nanowire network and wherein removing at least a portion of a nanowire includes removing a portion of the nanowire network.
16. The method of claim 14 , further comprising annealing the nanowires.
17. The method of claim 14 , further comprising doping at least a portion of the plurality of nanowires.
18. The method of claim 14 , further comprising electrically coupling at least one nanowire to an electrode.
19. The method of claim 14 , wherein removing at least a portion of a nanowire is accomplished through methods of micro-machining.
20. An ordered, planar network of nanostructures, comprising:
a plurality of nanowires intersecting at a plurality of intersection points that are parallel to, and within the plane, of a substrate, wherein the plurality of nanowires are substantially a single crystalline structure and wherein the nanowires comprise CdX, wherein X is S or Se; bismuth in an atomic percentage that is between about 5% and about 20%; and iodide in an atomic percentage that is between about 3% and about 10%; and
wherein intersecting nanowires are covalently bonded at intersection points.
21. The ordered, planar network of nanostructures according to claim 20 , wherein the intersecting nanowires intersect at angles that are substantially 90°.
22. The ordered, planar network of nanostructures according to claim 20 , wherein the nanowires are substantially straight.
23. The ordered, planar network of nanostructures according to claim 20 , wherein the nanowires are substantially uniform.
24. The ordered, planar network of nanostructures according to claim 20 , wherein the plurality of nanowires is a first plurality of nanowires forming a first nanowire network layer, further comprising:
a second nanowire network layer comprising a second plurality of nanowires that are substantially a single crystalline structure and substantially simultaneously synthesized with the first nanowire network; and
wherein intersecting nanowires in the second nanowire network layer are covalently bonded at intersection points creating a substantially 90° angle.
25. A nanowire, comprising:
CdX, wherein X is S or Se;
bismuth in an atomic percentage that is between about 5% and about 20%; and
iodide in an atomic percentage that is between about 3% and about 10%.
26. A nanowire network formed from a plurality of nanowires according to claim 25 .
27. An ordered, planar network of nanostructures, comprising:
a plurality of nanowires intersecting at a plurality of or substantially 30° intersection points that are parallel to, and within the plane of, a substrate, wherein the plurality of nanowires are substantially a single crystalline structure and wherein the nanowires comprise CdX, wherein X is S or Se; bismuth in an atomic percentage that is between about 5% and about 20%; and iodide in an atomic percentage that is between about 3% and about 10%; and
wherein intersecting nanowires are covalently bonded at intersection points.