Diamondoid monolayers as electron emitters
Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
1. An electron emitter which comprises a diamondoid monolayer, wherein the emission process of the electron emitter involves electron tunneling emission, and the diamondoid layer comprises a silane derivatized higher diamondoid.
2. The electron emitter of claim 1 , wherein the electron affinity of a surface of the diamondoid monolayer is negative.
3. The electron emitter of claim 1 , wherein the diamondoid monolayer is on a conductive or semiconductor substrate.
4. The electron emitter of claim 3 , wherein the substrate is comprised of gold, silver, silicon, platinum, palladium, aluminum or copper.
5. The electron emitter of claim 3 , wherein the substrate is a silicon substrate.
6. An electron display device comprising the electron emitter of claim 1 .
7. The electron display device of claim 6 , wherein the device is a flat panel display, a microwave amplifier, an electron microscope, an electron beam lithograph, a vacuum microelectronic device, solid state lighting, or an x-ray detector.
8. The electron display device of claim 7 , wherein the diamondoid monolayer is a self-assembled monolayer.
9. A flat panel display device comprising the electron emitter of claim 1 .
10. A X-ray detector comprising the electron emitter of claim 1 .
11. A method of altering the band structure of a substrate, which comprises:
a) selecting a suitable substrate for electron emission by electron tunneling emission; and
b) applying a monolayer of a silane derivatized higher diamondoid thereon.
12. The method of claim 11 , wherein the surface of the diamondoid monolayer has an electron affinity that is negative.
13. A method of emitting monochromatic electrons, comprising applying a narrowly defined energy potential to an electron emitter comprised of a silane derivatized higher diamondoid monolayer on a substrate to effect the emission of monochromatic electrons by electron tunneling emission.