IP Library Granted Patent US 8,574,033
Granted Patent B2
US 8,574,033 · App. 12/899,131 · Granted Nov 5, 2013

Wafer support member, method for manufacturing the same and wafer polishing unit comprising the same

Inventor: Jae Chel Sung (Gumi-si, KR)
Assignee: LG Siltron Inc.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,574,033
App. No.
12/899,131
Granted
Nov 5, 2013
Kind
B2
Abstract

Disclosed is a wafer support member including a base substrate, a support adhered at a predetermined width to the edge of the base substrate, the support having a round outermost part, and a coating layer provided on the outermost edge of the support.

Claims (21)

1. A wafer support member, comprising:

a base substrate;

a support including at least two layers, the support being adhered at a predetermined width to the edge of the base substrate, the support having a round outermost part, the round outermost part extending between a top surface and a lateral side surface of the support such that an edge formed between the top and lateral side surface of the support is rounded; and

a coating layer provided on a first portion of the support such that a second portion of the support is exposed, wherein the first portion of the support includes the round outermost part of the support, and wherein a curvature of the at least two layers at the round outermost part of the support is the same.

2. The wafer support member according to claim 1 , wherein the coating layer is an epoxy coating layer.

3. The wafer support member according to claim 1 , wherein the coating layer is composed of a mixture of epoxy and a polymer at a weight ratio of 2:1 to 4:1.

4. The wafer support member according to claim 1 , wherein the coating layer is provided to a thickness of 0.2 to 0.5 mm on the outermost edge of the round support.

5. The wafer support member according to claim 1 , wherein the coating layer is wider than the round part of the support.

6. The wafer support member according to claim 1 , wherein a ratio of the width of the coating layer to the width of the round part of the support is 1.4:1 to 1.6:1.

7. The wafer support member according to claim 6 , wherein the coating layer is further provided to a thickness of 0.1 to 0.3 mm in the non-round part of the support.

8. A wafer polishing unit, comprising:

a wafer support member to support a wafer;

a pressurizing unit to apply pressure to the wafer support member; and

a pressure-supplying unit to supply pressure to the pressurizing unit,

wherein the wafer support member includes a base substrate, a support adhered at a predetermined width to the edge of the base substrate, the support having a round outermost part and the support including at least two layers, the round outermost part extending between a top surface and a lateral side surface of the support such that an edge formed between the top and lateral side surface of the support is rounded, and a coating layer provided on a first portion of the support such that a second portion of the support is exposed, the first portion including the round outermost part of the support, wherein a curvature of the at least two layers at the round outermost part of the support is the same.

9. The wafer polishing unit according to claim 8 , wherein the coating layer is an epoxy coating layer.

10. The wafer polishing unit according to claim 8 , wherein the coating layer is composed of a mixture of epoxy and a polymer at a weight ratio of 2:1 to 4:1.

11. The wafer polishing unit according to claim 8 , wherein the support is provided to a thickness of 0.2 to 0.5 mm on the outermost edge of the round support.

12. The wafer polishing unit according to claim 8 , wherein the coating layer is wider than the round part of the support.

13. The wafer polishing unit according to claim 8 , wherein a ratio of the width of the coating layer to the width of the round part of the support is 1:1.4 to 1:1.6.

14. The wafer polishing unit according to claim 13 , wherein the coating layer is further provided to a thickness of 0.1 to 0.3 mm in the non-round part of the support.

Assignments (2)
CHANGE OF NAME Recorded May 11, 2011
From: SILTRON INC.
To: LG SILTRON INC.
Reel/Frame 026258/0331 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2010
From: SUNG, JAE CHEL
To: SILTRON INC.
Reel/Frame 025201/0028 →
Priority Claims (2)
KR 10-2009-0095195 · Oct 7, 2009 · national
KR 10-2010-0091172 · Sep 16, 2010 · national
Continuity (1)
Related Publication 20110081841A1 · Apr 7, 2011