Integrated structure of CIS based solar cell
In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.
1. An integrated structure of a CIS based thin film solar cell obtained by stacking a p-type CIS light absorbing layer, a buffer layer, and an n-type transparent conductive film in that order,
wherein the buffer layer has a stack structure of three or more layers,
a first buffer layer adjoining the p-type light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In),
a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film,
a third buffer layer is formed to cover
end faces exposed by forming an interconnect pattern in the p-type CIS light absorbing layer, the first buffer layer, and the second buffer layer, and
an end face to the n-type transparent conductive film and the second buffer layer, and
the third buffer layer is made of a zinc oxide-based thin film having a high resistivity of 0.1 to 100 Ωcm.
2. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein the third buffer layer has a resistivity lower than the resistivity of the second buffer layer.
3. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein the third buffer layer has a thickness of 10 to 300 nm.
4. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein the third buffer layer is formed using a metal organic chemical vapor deposition (MOCVD) method.
5. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein a concentration of a dopant contained in the third buffer layer is equal to or lower than 1×10 19 atoms/cm 3 .
6. The integrated structure of the CIS based thin film solar cell according to claim 5 , wherein the dopant contains any one of aluminum (Al), gallium (Ga), or boron (B).
7. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein a thickness of the first buffer layer is equal to or smaller than 20 nm, and a thickness of the second buffer layer is equal to or larger than 100 nm.
8. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein a ratio between a thickness of the second buffer layer to a thickness of the first buffer layer is equal to or larger than 5.
9. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein the first buffer layer is formed using a chemical bath deposition (CBD) method.
10. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein the second buffer layer is formed using a metal organic chemical vapor deposition (MOCVD) method.
11. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein a concentration of a dopant contained in the second buffer layer is equal to or lower than 1×10 19 atoms/cm 3 .
12. The integrated structure of the CIS based thin film solar cell according to claim 11 , wherein the dopant contains any one of aluminum (Al), gallium (Ga), or boron (B).
13. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein the first buffer layer contains any one of Cd x S y , Zn x S y , Zn x O y , Zn x (OH) y , In x S y , In x (OH) y , or In x O y (where, x and y denote any natural number).
14. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein a concentration of sulfur on a surface of the CIS light absorbing layer is equal to or higher than 0.5 atoms %.
15. The integrated structure of the CIS based thin film solar cell according to claim 1 , wherein the second buffer layer has resistivity equal to or higher than 0.1 Ωcm.