Semiconductor device
A semiconductor device, which exhibits an increased design flexibility for a capacitor element, and can be manufactured with simple method, is provided. A semiconductor device 100 includes: a silicon substrate 101 ; an interlayer film 103 provided on the silicon substrate 101 ; a multiple-layered interconnect embedded in the interlayer film 103 ; a flip-chip pad 111 , provided so as to be opposite to an upper surface of an uppermost layer interconnect 105 in the multiple-layered interconnect and having a solder ball 113 for an external coupling mounted thereon; and a capacitance film 109 provided between said uppermost layer interconnect 105 and the flip-chip pad 111 . Such semiconductor device 100 includes the flip-chip pad 111 composed of an uppermost layer interconnect 105 , a capacitive film 109 and a capacitor element 110.
1. A semiconductor device, comprising:
a semiconductor substrate;
an insulating interlayer on said semiconductor substrate;
an interconnect embedded in said insulating interlayer, said interconnect having separate first and second uppermost layers exposed at an upper surface of said insulating interlayer in a same opening above said insulating interlayer;
an electrode pad in said same opening opposite both said first uppermost layer and said second uppermost layer; and
a capacitance insulating film between said first uppermost layer and said electrode pad in said same opening;
wherein said electrode pad, said capacitance insulating film, and said first uppermost layer constitute a capacitor element; and
wherein said electrode pad is electrically coupled to said second uppermost layer in said same opening.
2. The semiconductor device according to claim 1 , further comprising a first insulating film covering an upper portion of said insulating interlayer, and wherein said same opening is in said first insulating film.
3. A semiconductor device, comprising:
a semiconductor substrate;
an insulating interlayer on said semiconductor substrate;
first and second wirings embedded in said insulating interlayer;
an insulating film on said first and second wirings and said insulating interlayer, said first and second wirings both having parts that are exposed from a same opening in said insulating film;
an electrode pad in said same opening and over both said parts of said first and second wirings, said same opening extending across both said parts of said first and second wirings, said electrode pad having contact with said first wiring in said same opening; and
a capacitance insulating film in said same opening between said second wiring and said electrode pad.
4. The semiconductor device according to claim 3 , wherein said capacitance insulating film comprises said insulating film whose thickness is reduced in said same opening.
5. The semiconductor device according to claim 3 , further comprising a bump electrode joined to said electrode pad.
6. The semiconductor device according to claim 1 , further comprising a bump electrode joined to said electrode pad.