Detection device manufacturing method using impurity semiconductor layer in arrayed pixels
In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.
1. A method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element disposed on the substrate and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element and which is isolated per pixel, a protection layer made of an inorganic material, disposed between the substrate and the plurality of electrodes, and covering the plurality of switch elements, and an interlayer insulating layer made of an organic material and disposed over the protection layer, the switch element and the electrode being connected to each other in a contact hole that is formed in the protection layer and the interlayer insulating layer, the method comprising:
forming, on the interlayer insulating layer, the electrodes in contact with the interlayer insulating layer and insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes;
forming an impurity semiconductor film that covers the insulating members and the electrodes, and that becomes the impurity semiconductor layer; and
forming a coating layer such that, when the insulating members are formed, the coating layer covers an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference located within the contact hole of the interlayer insulating layer.
2. The method of manufacturing the detection device according to claim 1 , wherein forming the electrodes comprises forming an insulating film made of the inorganic material and covering the interlayer insulating layer, and forming the insulating members from the insulating film, and forming a transparent conductive oxide film that covers the interlayer insulating layer and the insulating members, and forming the electrodes from the transparent conductive oxide film, and
forming the coating layer is performed after forming the protection layer and before forming the insulating members.
3. The method of manufacturing the detection device according to claim 2 , wherein forming the coating layer is performed after forming the protection layer and before forming the interlayer insulating layer.
4. The method of manufacturing the detection device according to claim 2 , wherein forming the coating layer is performed after forming the interlayer insulating layer and before forming the insulating members.
5. The method of manufacturing the detection device according to claim 2 , wherein the coating layer is made of an inorganic insulating material and is formed such that the contact hole is kept open in the protection layer.
6. The method of manufacturing the detection device according to claim 2 , wherein the coating layer is made of an electroconductive material and is formed in contact with the switch element and the electrode.
7. The method of manufacturing the detection device according to claim 1 , wherein forming the electrodes comprises forming a transparent conductive oxide film that covers the interlayer insulating layer, and forming the electrodes from the transparent conductive oxide film, and forming an insulating film made of the inorganic material and covering the interlayer insulating layer and the electrodes, and forming the insulating members from the insulating film, and
forming the coating layer is performed after forming the protection layer and before forming the insulating members.
8. The method of manufacturing the detection device according to claim 7 , wherein forming the coating layer is performed after forming the protection layer and before forming the interlayer insulating layer.
9. The method of manufacturing the detection device according to claim 7 , wherein forming the coating layer is performed after forming the interlayer insulating layer and before forming the insulating members.
10. The method of manufacturing the detection device according to claim 7 , wherein the coating layer is made of an inorganic insulating material and is formed such that the contact hole is kept open in the protection layer.
11. The method of manufacturing the detection device according to claim 7 , wherein the coating layer is made of an electroconductive material and is formed in contact with the switch element and the electrode.
12. The method of manufacturing the detection device according to claim 1 , wherein the coating layer is formed simultaneously with the insulating member by using the inorganic material that forms the insulating member.
13. The method of manufacturing the detection device according to claim 1 , further comprising removing a part of the impurity semiconductor film above the insulating member, thereby forming the impurity semiconductor layer.
14. The method of manufacturing the detection device according to claim 13 , wherein forming an impurity semiconductor film includes forming a semiconductor film that covers the impurity semiconductor film.
15. The method of manufacturing the detection device according to claim 14 , wherein removing a part of the impurity semiconductor film comprises removing a part of the impurity semiconductor film and a part of the semiconductor film above the insulating member, thereby forming the impurity semiconductor layer from the impurity semiconductor film and a semiconductor layer of the conversion element from the semiconductor film, respectively.
16. The method of manufacturing the detection device according to claim 13 , wherein removing a part of the impurity semiconductor film further includes forming a semiconductor film that covers the impurity semiconductor layer.
17. The method of manufacturing the detection device according to claim 16 , wherein removing a part of the impurity semiconductor film comprises removing the impurity semiconductor film and the semiconductor film above the insulating member, thereby forming the impurity semiconductor layer from the impurity semiconductor film and a semiconductor layer of the conversion element from the semiconductor film, respectively.
18. The method of manufacturing the detection device according to claim 17 , further comprising:
forming an impurity semiconductor film having a conductivity type different from that of the aforesaid impurity semiconductor film and covering the semiconductor film;
forming an electroconductive film covering the impurity semiconductor film of the different conductivity type and becoming an opposite electrode, different from the aforesaid electrode, of the conversion element; and
forming an electrode wiring, which is connected to the electroconductive film, at a position where an orthographically-projected image of the electrode wiring overlaps with the insulating member.