Dielectric composition and ceramic electronic component including the same
There is provided a dielectric composition, including: a basic powder including Ba m TiO 3 (0.995≦m≦1.010); a first subcomponent including 0.1 to 0.6 mole of zirconium (Zr) oxide or carbide, based on 100 moles of the basic powder; a second subcomponent including 0.8 to 6.0 moles of oxide or carbide including at least one of magnesium (Mg), strontium (Sr), and barium (Ba); a third subcomponent including 0.2 to 1.8 moles of oxide including at least one rare earth element; a fourth subcomponent including 0.05 to 0.30 mole of oxide including at least one transition metal; a fifth subcomponent including 0.05 to 0.35 mole of oxide including at least one of vanadium (V), niobium (Nb), and tantalum (Ta); and a sixth subcomponent including 0.5 to 4.0 moles of oxide including at least one of silicon (Si) and aluminum (Al).
1. A dielectric composition, comprising:
a basic powder including Ba m TiO 3 (0.995≦m≦1.010);
a first subcomponent including 0.1 to 0.6 mole of zirconium (Zr) oxide or carbide, based on 100 moles of the basic powder;
a second subcomponent including 0.8 to 6.0 moles of oxide or carbide including at least one of magnesium (Mg), strontium (Sr), and barium (Ba), based on 100 moles of the basic powder;
a third subcomponent including 0.2 to 1.8 moles of oxide including at least one rare earth element, based on 100 moles of the basic powder;
a fourth subcomponent including 0.05 to 0.30 mole of oxide including at least one transition metal, based on 100 moles of the basic powder;
a fifth subcomponent including 0.05 to 0.35 mole of oxide including at least one of vanadium (V), niobium (Nb), and tantalum (Ta), based on 100 moles of the basic powder; and
a sixth subcomponent including 0.5 to 4.0 moles of oxide including at least one of silicon (Si) and aluminum (Al), based on 100 moles of the basic powder.
2. The dielectric composition of claim 1 , wherein a value of the first subcomponent/the fifth subcomponent is 0.75 to 1.50.
3. The dielectric composition of claim 1 , wherein the rare earth element of the third subcomponent is selected from a group consisting of Sc, Y, La, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.
4. The dielectric composition of claim 1 , wherein the transition metal of the fourth subcomponent is selected from a group consisting of Cr, Mo, W, Mn, Fe, Co and Ni.
5. A ceramic electronic component, comprising:
a ceramic element having a plurality of dielectric layers laminated therein;
a plurality of internal electrodes formed within the ceramic element; and
at least one pair of external electrodes formed on an external surface of the ceramic element and electrically connected to the internal electrodes,
wherein the dielectric layers include a basic powder including Ba m TiO 3 (0.995≦m≦1.010); a first subcomponent including 0.1 to 0.6 mole of zirconium (Zr) oxide or carbide, based on 100 moles of the basic powder; a second subcomponent including 0.8 to 6.0 moles of oxide or carbide including at least one of magnesium (Mg), strontium (Sr), and barium (Ba), based on 100 moles of the basic powder; a third subcomponent including 0.2 to 1.8 moles of oxide including at least one rare earth element, based on 100 moles of the basic powder; a fourth subcomponent including 0.05 to 0.30 mole of oxide including at least one transition metal, based on 100 moles of the basic powder; a fifth subcomponent including 0.05 to 0.35 mole of oxide including at least one of vanadium (V), niobium (Nb), and tantalum (Ta), based on 100 moles of the basic powder; and a sixth subcomponent including 0.5 to 4.0 moles of oxide including at least one of silicon (Si) and aluminum (Al), based on 100 moles of the basic powder.
6. The ceramic electronic component of claim 5 , wherein a value of the first subcomponent/the fifth subcomponent is 0.75 to 1.50.
7. The ceramic electronic component of claim 5 , wherein each dielectric layer includes ceramic grains including the basic powder and the first to sixth subcomponents and grain boundaries present between the ceramic grains, and each of the ceramic grains includes a core part and a shell part surrounding the core part.
8. The ceramic electronic component of claim 5 , wherein the ceramic grains are present on the grain boundaries.
9. The ceramic electronic component of claim 5 , wherein the rare earth element of the third subcomponent is selected from a group consisting of Sc, Y, La, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.
10. The ceramic electronic component of claim 5 , wherein the transition metal of the fourth subcomponent is selected from a group consisting of Cr, Mo, W, Mn, Fe, Co and Ni.
11. The ceramic electronic component of claim 5 , wherein the dielectric layers each have a thickness of 0.2 to 10.0 μp.
12. The ceramic electronic component of claim 5 , wherein the internal electrodes include Nickel (Ni) or a Ni alloy.
13. The ceramic electronic component of claim 5 , wherein the internal electrodes and the dielectric layers are alternately laminated.