IP Library › Granted Patent US 8,597,965
Granted Patent B2
US 8,597,965 · App. 13/467,166 · Granted Dec 3, 2013

Light-emitting device and electronic device using the light-emitting device

Inventors: Kaoru Hatano (Kanagawa, JP); Akihiro Chida (Kanagawa, JP); Akihisa Shimomura (Kanagawa, JP); Shunpei Yamazaki (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,597,965
App. No.
13/467,166
Granted
Dec 3, 2013
Kind
B2
Abstract

An object is to provide a method for manufacturing a light-emitting device including a flexible substrate, in which separation is performed without separation at the interface between the light-emitting layer and the electrode. A spacer formed of a light absorbing material which absorbs laser light is formed over a partition of one of substrates, a coloring layer is formed over the other substrate, and the substrates are bonded to each other with the use of a bonding layer. The light-emitting layer and the electrode which are formed over the spacer are irradiated with laser light through the coloring layer, so that at least the bonding layer among the light-emitting layer, the electrode, the coloring layer, and the bonding layer is melted to form a fixed portion where the bonding layer and the spacer are bonded by welding.

Claims (44)

1. A method for manufacturing a light-emitting device, comprising the steps of:

forming a first separation layer over a first substrate, a layer including a transistor over the first separation layer, and a pixel electrode connected to the transistor;

forming a partition covering a periphery of the pixel electrode;

forming a spacer formed of a light absorbing material over the partition;

forming a layer including an organic compound over the pixel electrode, the partition, and the spacer;

forming an electrode having a light-transmitting property over the layer including the organic compound;

forming a second separation layer over a second substrate and a coloring layer over the second separation layer;

fixing the first substrate and the second substrate with a bonding layer having the light-transmitting property;

after separating the second substrate provided with the second separation layer, irradiating the spacer with laser light through the coloring layer so that the layer including the organic compound, the electrode having the light-transmitting property and the bonding layer are melted to form a fixed portion on and in contact with the spacer; and

separating the first substrate provided with the first separation layer after irradiation with the laser light,

wherein the fixed portion is a mixture of the layer including the organic compound, the electrode having the light-transmitting property and the bonding layer.

2. The method for manufacturing a light-emitting device according to claim 1 , wherein after the first substrate provided with the first separation layer is separated, a first flexible substrate is further bonded to the layer including the transistor.

3. The method for manufacturing a light-emitting device according to claim 1 , wherein after the second substrate provided with the second separation layer is separated, a second flexible substrate is further bonded to the coloring layer.

4. The method for manufacturing a light-emitting device according to claim 1 , wherein a beam profile of a laser beam along a cross section perpendicular to an optical axis of the laser light has a top flat shape in a focal position.

5. The method for manufacturing a light-emitting device according to claim 1 , wherein the first substrate and the second substrate are glass substrates.

6. The light-emitting device according to claim 1 , wherein the coloring layer is a light shielding film.

7. A light-emitting device comprising:

a layer including a transistor over a first substrate;

a pixel electrode connected to the transistor;

a partition covering a periphery of the pixel electrode;

a spacer on and in contact with the partition;

a fixed portion in contact with the spacer;

a layer including an organic compound over the pixel electrode;

an electrode having a light-transmitting property over the layer including the organic compound;

a second substrate provided with a coloring layer; and

a bonding layer maintaining a gap between the first substrate and the second substrate,

wherein the fixed portion is in contact with the bonding layer and is provided between the spacer and the coloring layer, and

wherein the fixed portion is a mixture of the layer including the organic compound, the electrode having the light-transmitting property and the bonding layer.

8. The light-emitting device according to claim 7 , wherein the spacer is a light absorbing material.

9. The light-emitting device according to claim 7 , wherein the first substrate and the second substrate are flexible substrates.

10. The light-emitting device according to claim 7 , wherein the coloring layer is a light shielding film.

11. A light-emitting device comprising:

a layer including a transistor over a first substrate;

a pixel electrode connected to the transistor;

a partition covering a periphery of the pixel electrode;

a spacer over the partition;

a fixed portion in contact with the spacer;

a layer including an organic compound in contact with the spacer;

an electrode having a light-transmitting property over the layer including the organic compound;

a second substrate provided with a light-shielding film; and

a bonding layer maintaining a gap between the first substrate and the second substrate,

wherein the fixed portion is in contact with the bonding layer and is provided between the spacer and the light shielding film, and

wherein the fixed portion is a mixture of the layer including the organic compound, the electrode haying the light-transmitting property and the bonding layer.

12. The light-emitting device according to claim 11 , wherein the first substrate and the second substrate are flexible substrates.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2012
From: HATANO, KAORU; CHIDA, AKIHIRO; SHIMOMURA, AKIHISA; YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 028179/0475 →
Priority Claims (1)
JP 2011-107414 · May 12, 2011 · national
Continuity (1)
Related Publication 20120286312A1 · Nov 15, 2012