Phase-change material and phase-change type memory device
A phase-change material, which has a high crystallization temperature and is superior in thermal stability of the amorphous phase, which has a composition of the general chemical formula Ge x M y Te 100-x-y wherein M indicates one type of element which is selected from the group which comprises Al, Si, Cu, In, and Sn, x is 5.0 to 50.0 (at %) and y is 4.0 to 45.0 (at %) in range, and x and y are selected so that 40 (at %)≦x+y≦60 (at %). This phase-change material further contains, as an additional element L, at least one type of element L which is selected from the group which comprises N, O, Al, Si, P, Cu, In, and Sn in the form of Ge x M y L z Te 100-x-y-z wherein z is selected so that 40 (at %)≦x+y+z≦60 (at %).
1. A phase-change material which has a composition of the general chemical formula Ge x M y Te 100-x-y
wherein M indicates one type of element which is selected from the group which comprises Al, Si, Cu, In, and Sn, x is 5.0 to 50.0 (at %) and y is 4.0 to 45.0 (at %) in range, and x and y are selected so that 40 (at %)≦x+y≦60 (at %).
2. A phase-change material which has a composition of the general chemical formula Ge x M y L z Te 100-x-y-z
wherein M indicates one type of element which is selected from the group which comprises Al, Si, Cu, In, and Sn, L is an element which is different from said M and at least one type of element which is selected from the group which comprises N, O, Al, Si, P, Cu, In, and Sn, x is 5.0 to 50.0 (at %) and y is 4.0 to 45.0 (at %) in range, and x and y are selected so that 40 (at %)≦x+y+z≦60 (at %).
3. A phase-change material as set forth in claim 1 , wherein when said selected one type of element M is Cu, said y is 4.0 to 38.0 (at %).
4. A phase-change material as set forth in claim 1 , wherein when said selected one type of element M is Al, said y is 4.0 to 15.0 (at %).
5. A phase-change material as set forth in claim 1 , wherein when said selected one type of element M is Si, said y is 4.0 to 15.0 (at %).
6. A phase-change material as set forth in claim 2 , wherein when said selected one type of element M is Cu and said element L is Si, said y is 10.0 to 38.0 (at %) and said z is 0.5 to 30 (at %).
7. A phase-change material as set forth in claim 1 , wherein when said selected one type of element M is In, said y is 20.0 to 40.0 (at %).
8. A phase-change material as set forth in claim 1 , wherein when said selected one type of element M is Sn, said y is 4.0 to 15.0 (at %).
9. A phase-change type memory device which is provided with a substrate, a memory layer which is formed by a phase-change material as set forth in claim 1 on a top of said substrate, and first and second electrodes for conduction to said memory layer.
10. A phase-change type memory device as set forth in claim 9 wherein said first and second electrodes are formed on said substrate in proximity to two ends of said memory layer.
11. A phase-change type memory device as set forth in claim 9 wherein said first electrode is formed by a bottom electrode layer and a heat-generating electrode layer which are formed on said substrate, and said second electrode is formed on said memory layer.
12. A phase-change type memory device as set forth in claim 10 wherein a diffusion barrier layer is formed between said memory layer and at least said substrate.
13. A phase-change material as set forth in claim 2 , wherein when said selected one type of element M is Cu, said y is 4.0 to 38.0 (at %).
14. A phase-change material as set forth in claim 2 , wherein when said selected one type of element M is Al, said y is 4.0 to 15.0 (at %).
15. A phase-change material as set forth in claim 1 , wherein when said selected one type of element M is Si, said y is 4.0 to 15.0 (at %).
16. A phase-change material as set forth in claim 2 , wherein when said selected one type of element M is In, said y is 20.0 to 40.0 (at %).
17. A phase-change material as set forth in claim 2 , wherein when said selected one type of element M is Sn, said y is 4.0 to 15.0 (at %).
18. A phase-change type memory device which is provided with a substrate, a memory layer which is formed by a phase-change material as set forth in claim 2 on a top of said substrate, and first and second electrodes for conduction to said memory layer.
19. A phase-change type memory device as set forth in claim 18 wherein said first and second electrodes are formed on said substrate in proximity to two ends of said memory layer.
20. A phase-change type memory device as set forth in claim 18 wherein said first electrode is formed by a bottom electrode layer and a heat-generating electrode layer which are formed on said substrate, and said second electrode is formed on said memory layer.
21. A phase-change type memory device as set forth in claim 19 wherein a diffusion barrier layer is formed between said memory layer and at least said substrate.