IP Library Granted Patent US 8,599,893
Granted Patent B2
US 8,599,893 · App. 13/225,609 · Granted Dec 3, 2013

Terahertz wave generator

Inventors: Namje Kim (Daejeon, KR); Kyung Hyun Park (Daejeon, KR); Young Ahn Leem (Daejeon, KR); Hyunsung Ko (Seoul, KR); Sang-Pil Han (Daejeon, KR); Chul-Wook Lee (Daejeon, KR); Dong-Hun Lee (Daejeon, KR)
Assignee: Electronics and Telecommunications Research Institute
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Quick Facts
Patent No.
US 8,599,893
App. No.
13/225,609
Granted
Dec 3, 2013
Kind
B2
Abstract

Disclosed is a terahertz wave generator which includes a dual mode semiconductor laser device configured to generate at least two laser lights having different wavelengths and to beat the generated laser lights; and a photo mixer formed on the same chip as the dual mode semiconductor laser device and to generate a continuous terahertz wave when excited by the beat laser light.

Claims (18)

1. A terahertz wave generator comprising:

a dual mode semiconductor laser device configured to generate at least two laser lights having different wavelengths and to beat the generated laser lights;

a photo mixer formed on a same chip as the dual mode semiconductor laser device and to generate a continuous terahertz wave when excited by the beat laser light;

a first distributed feedback laser diode configured to generate a light having a first wavelength;

a second distributed feedback laser diode configured to generate a light having a second wavelength; and

a phase tuning region placed between the first distributed feedback laser diode and the second distributed feedback laser diode and configured to control a phase of one of the first and second wavelengths.

2. The terahertz wave generator of claim 1 , wherein the dual mode semiconductor laser device is formed by a ridge type.

3. The terahertz wave generator of claim 1 , wherein each of the first distributed feedback laser diode, the second distributed feedback laser diode, and the phase tuning region includes an active wave guide.

4. The terahertz wave generator of claim 3 , further comprising:

electrodes formed on upper portions of the active wave guides to control a reflexibility of the active wave guides.

5. The terahertz wave generator of claim 1 , wherein the first distributed feedback laser diode includes a first diffraction grating having a first grating period, and the second distributed feedback laser diode a second diffraction grating having a second grating period.

6. The terahertz wave generator of claim 5 , wherein the first and second diffraction gratings are formed by a metal grating at a side of the active wave guide.

7. The terahertz wave generator of claim 5 , further comprising:

first and second micro heaters provided on upper portions of the first and second diffraction gratings and configured to control the first wavelength and the second wavelength.

8. The terahertz wave generator of claim 1 , wherein the photo mixer is formed of a wave guide type photo mixer.

9. The terahertz wave generator of claim 1 , further comprising:

a wave guide configured to transfer the beat laser light from the dual mode semiconductor laser device to the photo mixer.

10. The terahertz wave generator of claim 9 , wherein the wave guide is formed of an active wave guide not needing a regrowth process.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2011
From: KIM, NAMJE; PARK, KYUNG HYUN; LEEM, YOUNG AHN; KO, HYUNSUNG; HAN, SANG-PIL; LEE, CHUL-WOOK; LEE, DONG-HUN
To: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
Reel/Frame 026856/0958 →
Priority Claims (1)
KR 10-2010-0127117 · Dec 13, 2010 · national
Continuity (1)
Related Publication 20120147907A1 · Jun 14, 2012