IP Library › Granted Patent US 8,603,625
Granted Patent B2
US 8,603,625 · App. 12/913,107 · Granted Dec 10, 2013

Sintered ceramic body, manufacturing method thereof, and ceramic structure

Inventors: Yunie Izumi (Toyota, JP); Yoshimasa Kobayashi (Nagoya, JP); Yuji Katsuda (Tsushima, JP)
Assignee: NGK Insulators, Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,603,625
App. No.
12/913,107
Granted
Dec 10, 2013
Kind
B2
Abstract

A manufacturing method of a sintered ceramic body mixes barium silicate with aluminum oxide, a glass material, and an additive oxide to prepare a material mixture, molds the material mixture and fires the molded object. The barium silicate is monoclinic and has an average particle diameter in a range of 0.3 μm to 1 μm and a specific surface area in a range of 5 m 2 /g to 20 m 2 /g. The aluminum oxide has an average particle diameter in a range of 0.4 μm to 10 μm, a specific surface area in a range of 0.8 m 2 /g to 8 m 2 /g. A volume ratio of the aluminum oxide to the barium silicate is in a range of 10% by volume to 25% by volume.

Claims (26)

1. A sintered ceramic body, comprising:

a glass component;

a predetermined additive oxide component; and

aluminum oxide particles included in barium disilicate;

wherein a structure of the sintered ceramic body includes hexagonal celsian located around outer circumferences of the aluminum oxide particles.

2. The sintered ceramic body according to claim 1 , wherein when the aluminum oxide has a peak intensity IA at an angle of 2θ=43° in X-ray diffractometry and the hexagonal celsian has a peak intensity Ih at an angle of 2θ=11° in X-ray diffractometry, and a peak intensity ratio of IA/Ih is in a range of not less than 0.2 and not greater than 0.7.

3. The sintered ceramic body according to claim 1 , wherein the aluminum oxide particles have an average particle diameter of not less than 0.4 μm and not greater than 10 μm.

4. The sintered ceramic body according to claim 1 , wherein the predetermined additive oxide component is at least one selected from the group consisting of Cu, Mg, B, Zn, Bi, and Zr; and

wherein the predetermined additive oxide component has a content in oxide conversion in a range of not less than 0.5% by weight and not greater than 3% by weight relative to a total weight including the barium silicate and the aluminum oxide.

5. The sintered ceramic body in according to claim 1 , wherein the glass component includes Ba, Si, and B.

6. The sintered ceramic body according to claim 1 , wherein a Sr content of the sintered body is not higher than 0.5% by weight in oxide conversion.

7. A ceramic structure, comprising:

a ceramic layer comprising the sintered ceramic body according to claim 1 ;

a dielectric layer made of a dielectric material having a relative permittivity of not lower than 5 and not higher than 2500; and

a middle layer located between the ceramic layer and the dielectric layer.

8. The ceramic structure according to claim 7 , wherein the middle layer includes monoclinic celsian.

9. The ceramic structure according to claim 7 , wherein the middle layer has a thickness in a range of not less than 3 μm and not greater than 40 μm.

10. The ceramic structure according to claim 7 , further comprising:

a reaction layer formed at an interface between the dielectric layer and the middle layer and having a thickness of not greater than 3 μm.

11. A ceramic structure, comprising:

a ceramic layer of the sintered ceramic body in accordance with claim 1 ; and

a dielectric layer of a dielectric material having a relative permittivity of not lower than 5 and not higher than 2500 and having a content of less than 1.5% by weight of a specific element of causing a phase change from hexagonal celsian to monoclinic celsian.

12. The ceramic structure in accordance with claim 11 , wherein the content of the specific element of causing the phase change from the hexagonal celsian to the monoclinic celsian in the dielectric layer is less than 1.5% by weight in oxide conversion.

13. The ceramic structure in accordance with claim 11 , wherein the specific element of causing the phase change from the hexagonal celsian to the monoclinic celsian is at least one selected from the group consisting of Zn, Sr, Li, Na, Ca, and Ti.

14. The ceramic structure in accordance with claim 11 , further comprising:

a reaction layer formed at an interface of the dielectric layer to have a thickness of not greater than 3 μm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2010
From: IZUMI, YUNIE; KOBAYASHI, YOSHIMASA; KATSUDA, YUJI
To: NGK INSULATORS, LTD.
Reel/Frame 025202/0615 →
Priority Claims (2)
JP 2009-262817 · Nov 18, 2009 · national
JP 2010-102567 · Apr 27, 2010 · national
Continuity (1)
Related Publication 20110117360A1 · May 19, 2011