IP Library › Granted Patent US 8,603,852
Granted Patent B2
US 8,603,852 · App. 12/792,355 · Granted Dec 10, 2013

Method of manufacturing solid state imaging device, and solid state imaging device

Inventors: Yoshinori Toumiya (Kanagawa, JP); Ina Hori (Kumamoto, JP); Tadayuki Dofuku (Kumamoto, JP); Hitomi Kamiya (Kanagawa, JP); Atsushi Yamamoto (Kumamoto, JP); Taichi Natori (Kanagawa, JP)
Assignee: Sony Corporation
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Quick Facts
Patent No.
US 8,603,852
App. No.
12/792,355
Granted
Dec 10, 2013
Kind
B2
Abstract

Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.

Claims (17)

1. A method of manufacturing a solid state imaging device, comprising the steps of:

forming a light receiving portion in a light receiving area of a semiconductor substrate;

forming a pad portion in a pad area of the semiconductor substrate;

forming a microlens material layer over the light receiving portion and the pad portion;

forming a microlens in the microlens material layer corresponding to the light receiving portion;

forming a fluorine-containing siloxane film on the microlens material layer, thereby reducing reflection;

etching the microlens material layer and the fluorine-containing siloxane film over the pad portion to form an opening; and

imparting hydrophilicity to a surface of the fluorine-containing siloxane film and an inside portion of the opening by an oxygen radical treatment performed in a temperature range from 25 C to 35 C.

2. A method of manufacturing a solid state imaging device, comprising the steps of:

forming a light receiving portion in a light receiving area of a semiconductor substrate;

forming a pad portion in a pad area of the semiconductor substrate;

forming a microlens material layer over the light receiving portion and the pad portion;

forming a microlens in the microlens material layer corresponding to the light receiving portion;

forming an organic film of a low temperature oxide on the microlens material layer, thereby reducing reflection;

etching the microlens material layer and the organic film over the pad portion to form an opening; and

imparting hydrophilicity to a surface of the organic film of a low temperature oxide and an inside portion of the opening by an oxygen radical treatment performed in a temperature range from 25 C to 35 C.

3. The method according to claim 1 or 2 , comprising the step of imparting hydrophilicity to an upper main surface of the microlens material layer by an oxygen radical treatment.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 2, 2010
From: TOUMIYA, YOSHINORI; DOFUKU, TADAYUKI; KAMIYA, HITOMI; YAMAMOTO, ATSUSHI; NATORI, TAICHI
To: SONY CORPORATION
Reel/Frame 024473/0529 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 2, 2010
From: HORI, INA
To: SONY CORPORATION
Reel/Frame 024473/0572 →
Priority Claims (1)
JP 2009-144572 · Jun 17, 2009 · national
Continuity (1)
Related Publication 20100320554A1 · Dec 23, 2010