Semiconductor device

1. A bipolar semiconductor device comprising:

a main cell region consisting of a trench gate type element region; and

a sense cell region including a planar gate type element region, wherein

the trench gate type element region comprises:

a first conductivity type collector region,

a second conductivity type drift region laminated on the collector region,

a first conductivity type body region laminated on the drift region,

a second conductivity type emitter region formed on an upper surface side of the body region, and

a trench gate type insulation gate extending while penetrating the body region and the emitter region; and

the planar gate type element region comprises:

a first conductivity type collector region,

a second conductivity type drift region laminated on the collector region,

a second conductivity type emitter region formed on an upper surface side of the drift region,

a first conductivity type body region which separates the emitter region from the drift region, and

a planar gate type insulation gate opposing an area of the body region that separates the emitter region and the drift region, a part of the emitter region adjacent to the area of the body region and a part of drift region adjacent to the area of the body region, wherein

a second conductivity type carrier accumulation region is formed only in the planar gate type element region of the sense cell region, and

the carrier accumulation region is formed at a position of the drift region that is opposing the planar gate type insulation gate and is at a depth between the planar gate type insulation gate and the collector region.

2. A bipolar semiconductor device comprising:

a main cell region consisting of a trench gate type element region in which current flows along a thickness direction of the semiconductor device; and

a sense cell region including a planar gate type element region in which current flows along the thickness direction and at least two trench gate type element regions in which current flows along the thickness direction, wherein

the planar gate type element region is located between the at least two trench gate type element regions in the sense cell region.

3. A bipolar semiconductor device of claim 2 , further comprising at least two main cell regions,

wherein the sense cell region is located between the at least two main cell regions.

4. A bipolar semiconductor device of claim 3 , wherein

one of the at least two trench gate type element regions in the sense cell region is located adjacent to one of the at least two main cell regions, and

another of the at least two trench gate type element regions in the sense cell region is located adjacent to another of the at least two main cell regions.

5. A bipolar semiconductor device of claim 2 , wherein

the sense cell region comprises an upper electrode and a lower electrode, the upper electrode being commonly connected to the at least two trench gate type element regions and the planar gate type element region, and the lower electrode being commonly connected to the at least two trench gate type element regions and the planar gate type element region.