Semiconductor device having a fuse element
A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.
1. A semiconductor device, comprising:
a substrate;
a first interlayer dielectric layer formed over the substrate;
a fuse formed over the first interlayer dielectric layer;
a first conductive plate formed between the first interlayer dielectric layer and the fuse; and
a second conductive plate formed over the fuse,
wherein the second conductive plate overlaps the fuse in a plan view, the fuse comprises a pad and a first via which is connected to the pad, and the fuse is isolated from the first conductive plate.
2. The device as claimed in claim 1 , further comprising a first and a second conductive walls that are sandwiching the fuse.
3. The device as claimed in claim 2 ,
wherein the fuse is isolated from the first and the second conductive walls.
4. The device as claimed in claim 3 , further comprising a second interlayer dielectric layer formed over the first interlayer dielectric layer, and
wherein the fuse and the first and the second conductive walls are embedded into the second interlayer dielectric layer, the fuse and the first conductive wall are sandwiching only a part of the second interlayer dielectric layer, and
the fuse and the second conductive wall are sandwiching only a part of the second interlayer dielectric layer.
5. The device as claimed in claim 4 , wherein the second interlayer dielectric layer is multilayer, and
the second conductive plate is formed over the second interlayer dielectric layer, and the fuse and the second conductive plate are sandwiching only a part of the second interlayer dielectric layer.
6. The device as claimed in claim 5 , wherein the fuse is copper.
7. The device as claimed in claim 2 , wherein the fuse is copper.
8. The device as claimed in claim 2 , wherein the second conductive plate is connected to the first and the second conductive walls.
9. The device as claimed in claim 3 , wherein the fuse is copper.
10. The device as claimed in claim 1 , further comprising a first terminal which is connected to the first via; and wherein a width of the pad is narrower than a width of the first terminal.
11. The device as claimed in claim 4 , wherein the fuse is copper.
12. The device as claimed in claim 10 , wherein the fuse is copper.
13. The device as claimed in claim 10 , further comprising:
a second via which is connected to the pad; and
a second terminal which is connected to the second via,
wherein the width of the pad is narrower than a width of the second terminal in a plan view.
14. The device as claimed in claim 13 , wherein the first via and the second via are formed in the same dielectric layer.
15. The device as claimed in claim 1 , wherein the fuse is isolated from the second conductive plate.
16. The device as claimed in claim 15 , wherein the fuse is copper.
17. The device as claimed in claim 1 , wherein the fuse is copper.
18. A semiconductor device, comprising:
a substrate;
a fuse formed over the substrate;
a first conductive plate formed between the substrate and the fuse;
a second conductive plate formed over the fuse; and
a first conductive wall and a second conductive wall that are sandwiching the fuse,
wherein the second conductive plate overlaps the fuse in a plan view, the fuse comprises a pad and a first via which is connected to the pad, the fuse is isolated from the first conductive plate, and the fuse is isolated from the first and the second conductive walls.
19. The device as claimed in claim 18 , further comprising an interlayer dielectric layer formed over the substrate, and
wherein the fuse and the first and second conductive walls are embedded into the interlayer dielectric layer, the fuse and the first conductive wall are sandwiching only a part of the interlayer dielectric layer, and
the fuse and the second conductive wall are sandwiching only a part of the interlayer dielectric layer.
20. The device as claimed in claim 18 , wherein the fuse is copper.
21. A semiconductor device, comprising:
a substrate;
a fuse formed over the substrate;
a first conductive plate formed between the substrate and the fuse; and
a second conductive plate formed over the fuse,
wherein the second conductive plate overlaps the fuse in a plan view, the fuse comprises a pad and a first via which is connected to the pad, and the fuse is isolated from the first conductive plate by the pad of the fuse being spaced apart from the first conductive plate by an interlayer dielectric film.
22. The device as claimed in claim 21 , further comprising a first conductive wall and a second conductive wall that are sandwiching the fuse.
23. The device as claimed in claim 21 , further comprising a first terminal which is connected to the first via;
and wherein a width of the pad is narrower than a width of the first terminal.
24. The device as claimed in claim 21 , wherein the fuse is spaced apart from the second conductive plate.