Solid-state radiation detector with improved sensitivity
A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.
1. A radiation detector, comprising:
a semiconductor substrate comprising CdTe or CZT and having opposing front and rear surfaces;
a cathode electrode located on the front surface of said semiconductor substrate configured so as to receive radiation; and
a plurality of anode electrodes formed on the rear surface of said semiconductor substrate;
wherein the plurality of anode electrodes are configured as pixels with an interpixel gap between each two adjacent anode electrode pixels;
wherein the interpixel gap width is between about 300 μm and about 500 μm; and
wherein a work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.
2. The radiation detector of claim 1 , wherein the work function of the cathode electrode material is less than about 4.5 eV, and the work function of the anode electrode material is greater than or equal to about 4.8 eV.
3. The radiation detector of claim 1 , wherein the cathode electrode material comprises one of In, Al, and Ti.
4. The radiation detector of claim 1 , wherein the anode electrode material comprises one of Au and Pt.
5. The radiation detector of claim 1 , wherein the substrate lacks a p-n or p-i-n junction.
6. The radiation detector of claim 1 , wherein said interpixel gap width is about 300 μm.
7. The radiation detector of claim 1 , wherein said interpixel gap width is about 460 μm.
8. The radiation detector of claim 1 , further comprising an electrically conductive housing located in electrical contact with the cathode electrode.
9. The radiation detector of claim 1 , further comprising a voltage source electrically connected to the anode and the cathode electrodes.
10. A radiation detector system, comprising:
a semiconductor substrate comprising CdTe or CZT and having opposing front and rear surfaces;
a cathode electrode located on the front surface of said semiconductor substrate configured so as to receive radiation;
a plurality of anode electrodes formed on the rear surface of said semiconductor substrate, wherein a work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate;
wherein the plurality of anode electrodes are configured as pixels with an interpixel gap between each two adjacent anode electrode pixels;
wherein the interpixel gap width is between about 300 μm and about 500 μm; and
a means for applying a forward bias to the detector during operation such that the anode electrodes is maintained at a higher potential than the cathode electrode and such that the signal is collected from the anode electrodes.
11. The radiation detector system of claim 10 , wherein the work function of the cathode electrode material is less than about 4.5 eV, and the work function of the anode electrode material is greater than or equal to about 4.8 eV.
12. The radiation detector system of claim 10 , wherein the cathode electrode material comprises one of In, Al, and Ti and the anode electrode material comprises one of Au and Pt.
13. A method of operating a radiation detector, comprising:
providing a radiation detector comprising:
a semiconductor substrate comprising CdTe or CZT and having opposing front and rear surfaces;
a cathode electrode located on the front surface of said semiconductor substrate configured so as to receive radiation; and
a plurality of anode electrodes formed on the rear surface of said semiconductor substrate, wherein a work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate, wherein the plurality of anode electrodes are configured as pixels with an interpixel gap between each two adjacent anode electrode pixels, and wherein the interpixel gap width is between about 300 μm and about 500 μm;
receiving radiation at the cathode electrode;
applying a forward bias to detector to maintain the anode electrodes at a higher potential than the cathode electrode; and
collecting a signal from the anode electrodes.
14. The method of claim 13 , wherein the work function of the cathode electrode material is less than about 4.5 eV, and the work function of the anode electrode material is greater than or equal to about 4.8 eV.
15. The method of claim 13 , wherein the cathode electrode material comprises one of In, Al, and Ti and the anode electrode material comprises one of Au and Pt.
16. The method of claim 13 , wherein said forward bias injects electrons from said cathode electrode material into the front surface of the semiconductor substrate.
17. The method of claim 13 , wherein the radiation comprises at least one of gamma ray and X-ray radiation.
18. The method of claim 13 , wherein the signal comprises a measured current or voltage which corresponds to the radiation received at each pixel.
19. The method of claim 18 , wherein said interpixel gap width is about 300 μm.
20. The method of claim 18 , wherein said interpixel gap width is about 460 μm.