Pressure sensor package systems and methods

1. An integrated circuit (IC) sensor device comprising:

at least one sensing element;

a framing element disposed around the at least one sensing element at a wafer-level;

a package having at least one port predefined at the wafer-level by the framing element, the at least one port configured to expose at least a portion of the at least one sensing element to an ambient environment; and

a material layer applied over the at least one sensing element in the at least one port.

2. The IC sensor device of claim 1 , further comprising:

at least one bond pad substantially enclosed by the package;

a sensor die substantially enclosed by the package; and

a leadframe coupled to the sensor die and to the at least one bond pad.

3. The IC sensor device of claim 2 , wherein the leadframe is coupled to the at least one bond pad by a wire bond.

4. The IC sensor device of claim 2 , further comprising an application-specific IC (ASIC) coupled to the leadframe.

5. The IC sensor device of claim 1 , wherein the framing element comprises a polymer.

6. The IC sensor device of claim 1 , wherein a depth of the pressure port is in a range of about 100 micrometers to about 500 micrometers.

7. The IC sensor device of claim 1 , further comprising a package cover coupled to at least one surface of the package.

8. The IC sensor device of claim 1 , wherein the material layer is a gel.

9. The IC sensor device of claim 1 , wherein the at least one sensing element comprises a membrane and a cavity.

10. The IC sensor device of claim 1 , wherein the at least one sensing element comprises a piezoresistive element.

11. The IC sensor device of claim 1 , comprising:

a first framing element disposed around a first sensing element to define a first port on a first side of the package; and

a second framing element disposed around a second sensing element to define a second port spaced apart from the first port on the first side of the package, the first and second sensing elements forming a differential sensor.

12. The IC sensor device of claim 1 , wherein the framing element is disposed around first and second sensing elements, and wherein a material layer is applied over the first sensing element in a portion of the at least one port to form an inertia sensor.

13. The IC sensor device of claim 1 , wherein the sensor device comprises one of a pressure sensor or an optical sensor.

14. A micro-electromechanical system (MEMS) pressure sensor comprising:

a sensor die comprising first and second sensing elements each including a movable membrane and a cavity; and

a sensor package substantially enclosing the sensor die and comprising a first frame element disposed around the first sensing element at a wafer level to define a first port on a first side of the sensor package, and a second frame element disposed around the second sensing element at a wafer level to define a second port spaced apart from the first port on the first side of the package, the first and second ports configured to expose at least a portion of the first and second sensing elements, respectively, to an ambient environment, the first and second sensing elements forming a differential sensor.

15. The MEMS pressure sensor of claim 14 , further comprising a leadframe coupled to the sensor die.

16. The MEMS pressure sensor of claim 14 , wherein the pressure sensor is selected from the group consisting of: an absolute pressure sensor; a piezoresistive effect pressure sensor; a relative pressure sensor; and an inertia sensor.

17. The MEMS pressure sensor of claim 14 , wherein at least one of the first or second ports is formed in a first surface of the sensor package, and wherein a top of at least one of the first or second framing elements is planar with the first surface.

18. The MEMS pressure sensor of claim 14 , wherein the sensor package comprises a mold compound.

19. The MEMS pressure sensor of claim 14 , wherein the first and second framing elements comprise a polymer material.