Light emitting device, manufacturing method thereof, light emitting device package, and lighting system
A light emitting device is provided. The light emitting device includes a first electrode layer, a light emitting structure, and a second electrode layer. The light emitting structure is formed on the first electrode layer to emit blue series light having a main peak wavelength region of about 430 nm to about 470 nm, and includes a light extraction structure. The second electrode layer includes a first layer, which is formed of a metal material different from a wavelength of the blue series light in Plasmon frequencies, on the light extraction structure.
1. A light emitting device comprising:
a first electrode layer;
a light emitting structure formed on the first electrode layer to emit blue series light having a main peak wavelength region of about 430 nm to about 470 nm, and comprising a light extraction structure; and
a second electrode layer comprising a first layer, which is formed of a metal material different from a wavelength of the blue series light in Plasmon frequencies, on the light extraction structure.
2. The light emitting device according to claim 1 , wherein the light extraction structure is formed to have random surface roughness or a periodic pattern.
3. The light emitting device according to claim 1 , wherein the light extraction structure has a period of about 200 nm to about 3000 nm.
4. The light emitting device according to claim 1 , wherein the first layer is formed of Al.
5. The light emitting device according to claim 1 , wherein the first electrode layer comprises:
a conductive support member;
a reflection layer on the conductive support member; and
an ohmic layer on the reflection layer.
6. The light emitting device according to claim 1 , wherein the first layer is formed in correspondence with a shape of the light extraction structure.
7. A light emitting device comprising:
a first electrode layer;
a light emitting structure formed on the first electrode layer to emit blue series light having a main peak wavelength region of about 430 nm to about 470 nm, and comprising a light extraction structure;
a second electrode layer comprising a first layer, which is formed of a metal material different from a wavelength of the blue series light in Plasmon frequencies, at least a region of the light emitting structure; and
a low refractive layer between the light emitting structure and the second electrode layer, and having a refractive index lower than a refractive index of the light emitting structure.
8. The light emitting device according to claim 7 , wherein the light extraction structure has a period of about 200 nm to about 3000 nm.
9. The light emitting device according to claim 7 , wherein the low refractive layer is formed of a light-transmitting material.
10. The light emitting device according to claim 9 , wherein the low refractive layer is formed of a conductive material.
11. The light emitting device according to claim 10 , wherein the low refractive layer is formed of at least one selected from the group consisting of ITO, ZnO, IZO(In—ZnO), GZO(Ga—ZnO), AZO(Al—ZnO), AGZO(Al—Ga ZnO), IGZO(In—Ga ZnO), IrO x , and RuO x .
12. The light emitting device according to claim 9 , wherein the low refractive layer is formed of an insulating material.
13. The light emitting device according to claim 12 , wherein the low refractive layer is formed of at least one selected from the group consisting of SiO 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , and TiO 2 .
14. The light emitting device according to claim 12 , wherein an area of the low refractive layer is less than an area of a bottom of the second electrode.
15. The light emitting device according to claim 7 , wherein the first layer is formed of Al.
16. The light emitting device according to claim 7 , wherein the second electrode layer comprises:
a third layer formed of a metal material having an adhesive property, on the first layer; and
a second layer formed of a metal material which prevents interlayer diffusion, between the first and third layers.
17. The light emitting device according to claim 7 , wherein the first electrode layer comprises:
a conductive support member;
a reflection layer on the conductive support member; and
an ohmic layer on the reflection layer.
18. A light emitting device package comprising:
a body;
first and second conductive layers disposed at the body;
a light emitting device disposed at the body, and electrically connected to the first and second conductive layers; and
a molding member surrounding the light emitting device,
wherein the light emitting device comprises:
a first electrode layer;
a light emitting structure formed on the first electrode layer to emit blue series light having a main peak wavelength region of about 430 nm to about 470 nm, and comprising a light extraction structure; and
a second electrode layer comprising a first layer, which is formed of a metal material different from a wavelength of the blue series light in Plasmon frequencies, on the light extraction structure.
19. The light emitting device package according to claim 18 , wherein the light emitting device further comprises a low refractive layer having a refractive index lower than a refractive index of the light emitting structure between the light emitting structure and the second electrode layer.
20. The light emitting device according to claim 19 , wherein the low refractive layer is formed of a light-transmitting material.