Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
A solid-state imaging device includes a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate.
1. A solid-state imaging device comprising:
a substrate;
a photoelectric conversion unit in the substrate and that generates signal charges in accordance with the amount of received light;
a through-hole extending through the substrate from a front surface side of the substrate to a rear surface side of the substrate;
a vertical gate electrode in the through-hole;
a gate insulating film between the vertical gate electrode and an inner circumferential surface of the through-hole, the vertical gate electrode allowing a reading-out portion to read out the signal charges generated by the photoelectric conversion unit when a potential is applied to the vertical gate electrode; and
a charge fixing film with negative fixed charges covering the rear surface side of the substrate and a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate so as to be between an end portion of the vertical gate electrode and the portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate.
2. The solid-state imaging device according to claim 1 , wherein a channel-formed layer is formed along the vertical gate electrode, at a reading-out portion from the photoelectric conversion unit, in the substrate.
3. The solid-state imaging device according to claim 1 , further comprising one or a plurality of layers of insulating films on the charge fixing film.
4. The solid-state imaging device according to claim 1 , wherein the charge fixing film has a stacked structure of two or more kinds of layers.
5. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion unit comprises a plurality of layers of photodiodes formed in a depth direction of the substrate.
6. An electronic apparatus comprising:
an optical lens;
a solid-state imaging device with (a) a substrate, (b) a photoelectric conversion unit in the substrate and that generates signal charges in accordance with the amount of received light, (c) a through-hole extending through the substrate from a front surface side of the substrate to a rear surface side of the substrate, (d) a vertical gate electrode in the through-hole, (e) a gate insulating film between the vertical gate electrode and an inner circumferential surface of the through-hole, the vertical gate electrode allowing a reading-out portion to read out the signal charges generated by the photoelectric conversion unit when a potential is applied to the vertical gate electrode, and (f) a charge fixing film with negative fixed charges covering the rear surface side of the substrate and a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate so as to be between an end portion of the vertical gate electrode and the portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate; and
a signal processing circuit that processes an output signal that is output from the solid-state imaging device.