Magnetic storage element, magnetic storage device, and magnetic memory
A magnetic storage element according to an embodiment includes: a magnetic thin wire extending in a first direction and having a plurality of magnetic domains partitioned by domain walls; an electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire.
1. A magnetic storage element comprising:
a magnetic thin wire extending in a first direction and having a plurality of magnetic domains partitioned by domain walls;
a first electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and
an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire,
wherein the assisting unit includes a magnetic layer connected to the magnetic thin wire, a nonmagnetic layer formed on the magnetic layer, a magnetization fixed layer that is formed on the nonmagnetic layer and has a magnetization direction fixed, and a second electrode applying a current between the magnetic layer and the magnetization fixed layer.
2. A magnetic storage element comprising:
a magnetic thin wire in a first direction and having a plurality of magnetic domains partitioned by domain walls;
an electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and
an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire,
wherein the assisting unit includes a magnetic layer located in the vicinity of at least a partial region of the magnetic thin wire, and a wiring for applying a current magnetic field to the magnetic layer, the current magnetic field being generated by a current flow, and
wherein the magnetic layer is formed to surround at least the partial region of the magnetic thin wire.
3. A magnetic storage element comprising:
a magnetic thin wire in a first direction and having a plurality of magnetic domains partitioned by domain walls;
an electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and
an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire,
wherein the assisting unit includes a magnetic layer located in the vicinity of at least a partial region of the magnetic thin wire, and a coil for applying a current magnetic field to the magnetic layer, the current magnetic field being generated by a current flow.
4. A magnetic storage element comprising:
a magnetic thin wire in a first direction and having a plurality of magnetic domains partitioned by domain walls;
a first electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and
an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire,
wherein the assisting unit includes a magnetic layer located in the vicinity of at least a partial region of the magnetic thin wire, a nonmagnetic layer formed on the magnetic layer, a magnetization fixed layer that is formed on the nonmagnetic layer and has a magnetization direction fixed, and a second electrode applying a current between the magnetic layer and the magnetization fixed layer.
5. The element according to claim 3 , wherein the magnetic layer is formed to surround at least the partial region of the magnetic thin wire.
6. A magnetic storage element comprising:
a magnetic thin wire in a first direction and having a plurality of magnetic domains partitioned by domain walls;
a first electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and
an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire,
wherein the assisting unit includes a piezoelectric layer formed to surround at least a partial region of the magnetic thin wire, and a second electrode applying a voltage to the piezoelectric layer.
7. The element according to claim 6 , wherein the piezoelectric layer contains at least one of potassium sodium tartrate, zinc oxide, aluminum nitride, lead zirconate titanate, lead lanthanum zirconate titanate, quartz crystal, lithium niobate, lithium tantalate, lithium tetra borate, potassium niobate, langasite crystal, and potassium sodium tartrate tetrahydrate.
8. The element according to claim 6 , wherein
the piezoelectric layer is formed at least at one terminal of the magnetic thin wire in the first direction,
the magnetic storage element further comprises a substrate formed in a direction perpendicular to the first direction, and
the magnetic thin wire contains at least one of Co, CoPt, CoCrPt, GdFe, GdCo, GdFeCo, TbFe, TbCo, TbFeCo, GdTbFe, GdTbCo, DyFe, DyCo, or DyFeCo.
9. The element according to claim 6 , wherein
the piezoelectric layer is formed to surround the magnetic thin wire in the first direction,
the magnetic storage element further comprises a substrate formed on the opposite side from a side of the piezoelectric layer,
the magnetic thin wire being formed on the side of the piezoelectric layer, and the magnetic thin wire is a film stack including a Co layer and a Ni layer, or contains at least one of Co, CoPt, FePt, GdFe, GdCo, GdFeCo, TbFe, TbCo, TbFeCo, GdTbFe, GdTbCo, DyFe, DyCo, or DyFeCo.
10. A magnetic storage device comprising:
a plurality of magnetic thin wires in a first direction and including a plurality of magnetic domains partitioned by domain walls;
a piezoelectric layer formed to surround each of the magnetic thin wires; and an electrode formed to extend in the first direction and applying a voltage to the piezoelectric layer.
11. A magnetic storage device comprising:
a plurality of magnetic thin wires arranged in a matrix form, each of the magnetic thin wires in a first direction and including a plurality of magnetic domains partitioned by domain walls;
a plurality of first wirings corresponding to columns of the plurality of magnetic thin wires, each of the first wirings being formed on one of an upper face and a lower face of each corresponding one of the magnetic thin wires;
a plurality of second wirings corresponding to rows of the plurality of magnetic thin wires, each of the second wirings being formed on the one of the upper face and the lower face of each corresponding one of the magnetic thin wires;
a piezoelectric layer formed to extend along a plane perpendicular to the first direction; and
an electrode that is formed to extend along a plane perpendicular to the first direction, and applies a voltage to the piezoelectric layer.
12. The device according to claim 11 , wherein the piezoelectric layer and the electrode are formed on the same side as the one of the upper face and the lower face of each of the magnetic thin wires.
13. The device according to claim 11 , wherein the piezoelectric layer and the electrode are formed on a face on the opposite side from the one of the upper face and the lower face of each of the magnetic thin wires.
14. A magnetic memory comprising
a plurality of magnetic storage devices of claim 10 , the magnetic storage devices being arranged in a matrix form.