Plasma etching method
A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.
1. A plasma etching method in which plasma is generated from a processing gas and a silicon substrate is etched to form a tapering etching structure having a wide top opening width and a narrow bottom width in the silicon substrate, the method comprising:
a first step in which a first processing gas comprising a fluorine-containing gas and N 2 gas but absent O 2 gas is used to generate plasma, wherein plasma generated by the fluorine-containing gas etches a first portion of the tapering etching structure into the silicon substrate while plasma generated by the N 2 gas forms a first etch-resistant layer on the silicon substrate; and
a second step, subsequent to the first step, in which a second processing gas comprising a fluorine-containing gas and an oxygen-containing gas is used to generate plasma, wherein plasma generated by the fluorine-containing gas etches a second portion of the tapering etching structure into the silicon substrate while plasma generated by the oxygen-containing gas forms a second etch-resistant layer on the silicon substrate.
2. The plasma etching method according to claim 1 , in which the tapering etching structure comprises a taper shape and a surface roughness of a tapering region, and in which at least one of the taper shape and the surface roughness of the tapering region is controlled by adjusting a supply flow rate of the N 2 gas during the first step.
3. The plasma etching method according to claim 2 , in which the supply flow rate of the N 2 gas is within a range of 100 to 400 sccm.
4. The plasma etching method according to claim 1 , in which the tapering etching structure comprises a taper shape and a surface roughness of a tapering region, and in which at least one of the taper shape and the surface roughness of the tapering region is controlled by adjusting a chamber inner pressure during at least one of the first and second steps.
5. The plasma etching method according to claim 4 , in which the chamber inner pressure is within a range of 12 to 25 Pa.
6. The plasma etching method according to claim 1 , in which a process time of the first step is set in a range of 4 to 10 seconds.
7. The plasma etching method according to claim 1 , in which the fluorine-containing gas of at least one of the first and second processing gases comprises one of SF 6 gas and CF 4 gas.
8. The plasma etching method according to claim 1 , in which the oxygen-containing gas comprises O 2 gas.