HTS coated conductor with particle inclusions, and method of production of an HTS coated conductor
A high temperature superconductor (=HTS) coated conductor ( 1 ), comprising an HTS layer ( 11 ) deposited epitaxially on a substrate ( 2 ), wherein the HTS layer ( 11 ) exhibits a lattice with a specific crystal axis being oriented perpendicular to the substrate plane (SP), in particular wherein the HTS layer material is of ReBCO type and the c-axis (c) is oriented perpendicular to the substrate plane (SP), wherein the HIS layer ( 11 ) comprises particle inclusions ( 4 ), in particular wherein the particle inclusions ( 4 ) may be used to introduce pinning of magnetic flux, is characterized in that at least a part ( 4 a ) of the particle inclusions ( 4 ) are formed of the same material as the HTS layer ( 11 ), and/or of chemical fractions of the material of the HTS layer ( 11 ), such that the average stoichiometry of said part ( 4 a ) of the particle inclusions ( 4 ) corresponds to the stoichiometry of the HTS layer ( 11 ), and that the particle inclusions of said part ( 4 a ) are discontinuities of the lattice of the HTS layer ( 11 ). A more simple method for producing a HTS coated conductor with reduced losses, and with improved critical current and critical magnetic field is thereby provided.
1. A method for producing an HTS coated conductor, the method comprising the steps of:
a) selecting a substrate;
b) generating a sequence of gas pressure pulses having increased gas pressure;
c) directing a laser beam onto a target to be ablated, the laser beam comprising a sequence of laser pulses having increased energy density, wherein the gas pressure pulses of step b) and the laser pulses of step c) overlap in time; and
d) depositing HTS material on the substrate during steps b) and c).
2. The method of claim 1 , wherein an HTS layer is deposited epitaxially on said substrate, said HTS layer exhibiting a lattice with a specific crystal axis being oriented perpendicular to a substrate plane, wherein said HTS layer comprises particle inclusions, at least a part of said particle inclusions being formed from chemical fractions of a material of said HTS layer,
such that an average stoichiometry of said part of said particle inclusions corresponds to a stoichiometry of said HTS layer, said particle inclusions of said part being discontinuities of said lattice of said HTS layer.
3. The method of claim 2 , wherein said HTS layer material is of ReBCO type and a c-axis is oriented perpendicular to said substrate plane.
4. The method of claim 1 , wherein said particle inclusions introduce pinning of magnetic flux.
5. The method of claim 2 , wherein, in said part, said particle inclusions formed of said same material as said HTS layer are single crystalline with an orientation of a specific axis non-perpendicular to said substrate plane or polycrystalline.
6. The method of claim 1 , wherein a mean radius of said particle inclusions of said part is between 1 nm and 300 nm.
7. The method of claim 5 , wherein a mean radius of said particle inclusions of said part is between 1 nm and 15 nm.
8. The method of claim 2 , wherein a mean separation between said particle inclusions of said part is between 5 and 100 times a mean radius of said particle inclusions of said part.
9. The method of claim 1 , wherein said material of the HTS layer comprises ReBa 2 Cu 3 O 7-x , with Re being Y or another rare earth element.
10. The method of claim 1 , wherein said particle inclusions of said part are confined in a number of first sublayers separated by second sublayers not containing said particle inclusions of said part.
11. The method of claim 1 , wherein the deposition regime is varied in several cycles through increasing/decreasing the energy density per pulse of the laser beam and the process gas pressure.
12. The method of claim 11 , wherein a deposition regime variation includes several periodic cycles.
13. The method of claim 11 , wherein during a cycle, the energy density per pulse or/and the process gas pressure remains substantially constant for at least 50% of the cycle.
14. The method of claim 11 , wherein a deposition regime variation includes cycles of increasing/decreasing the process gas pressure, with a duration of an interval of increased process gas pressure within such a cycle corresponding to between 0.001% and 1% of an overall deposition duration.
15. The method of claim 1 , wherein a ratio of the maximum energy density per pulse and an average energy density per pulse used during deposition is between 1.1 and 4.
16. The method of claim 1 , wherein a ratio of a maximum process gas pressure and an average process gas pressure used during deposition is between 1.5 and 50.
17. The method of claim 1 , wherein an average stoichiometry of the target used corresponds to a stoichiometry of the HTS material.
18. The HTS coated conductor of claim 2 , wherein the average stoichiometry of all particle inclusions in said HTS layer corresponds to the stoichiometry of said HTS layer.
19. A method for producing an HTS coated conductor, the method comprising the steps of:
a) selecting a substrate;
b) generating a sequence of gas pressure pulses having increased gas pressure, wherein each of those gas pressure pulses has a duration of between 0.001% and 1% of an overall deposition duration;
c) directing a laser beam onto a target to be ablated, the laser beam comprising a sequence of laser pulses having increased energy density, wherein the gas pressure pulses of step b) and the laser pulses of step c) overlap in time; and
d) depositing HTS material on the substrate during steps b) and c).