Power semiconductor device

1. A power semiconductor device comprising:

a source electrode disposed on a device activation region and widened in a direction toward a first side;

a drain electrode arranged alternately with the source electrode on the device activation region and widened in a direction toward a second side facing the first side;

an insulating layer disposed on the source electrode and the drain electrode and configured to comprise a plurality of via contacts contacting the source electrode and the drain electrode;

a source electrode pad disposed in a first region on the insulating layer to be brought into contact with the source electrode; and

a drain electrode pad disposed in a second region separated from the first region on the insulating layer and brought into contact with the plurality of via contacts contacting the drain electrode.

2. The power semiconductor device of claim 1 , further comprising:

a gate electrode connected with a plurality of gate electrode lines disposed between the source electrode and the drain electrode on the device activation region, and disposed in at least one side of the device activation region; and

a gate electrode pad disposed in a third region separated from the first region and the second region on the device activation region, and connected with the plurality of via contacts contacting the gate electrode.

3. The power semiconductor device of claim 2 , wherein the insulating layer comprises:

a plurality of first via holes to expose the source electrode disposed in the first region;

a plurality of second via holes to expose the drain electrode disposed in the second region; and

a plurality of third via holes to expose the gate electrode disposed in the third region.

4. The power semiconductor device of claim 3 , wherein the insulating layer comprises:

a plurality of first via contacts disposed in the plurality of first via holes to be brought into the source electrode, and connected with the source electrode pad;

a plurality of second via contacts disposed in the plurality of second via holes to be brought into the drain electrode, and connected with the drain electrode pad; and

a plurality of third via contacts disposed in the plurality of third via holes to be brought into the gate electrode, and connected with the gate electrode pad.

5. The power semiconductor device of claim 3 , wherein the plurality of first via holes are provided in a shape of a trapezoid widening in a direction toward the first side in the first region, corresponding to the widening structure of the source electrode.

6. The power semiconductor device of claim 3 , wherein the plurality of second via holes are provided in a shape of a trapezoid widening in a direction toward the second side in the second region, corresponding to the widening structure of the drain electrode.

7. The power semiconductor device of claim 1 , wherein the device activation region comprises a buffer layer, an undoped nitride semiconductor layer, and a nitride semiconductor layer which are sequentially disposed on the substrate.

8. The power semiconductor device of claim 7 , wherein the nitride semiconductor layer comprises:

a first nitride semiconductor layer disposed on the undoped nitride semiconductor layer; and

a second nitride semiconductor layer disposed on the first nitride semiconductor layer.

9. The power semiconductor device of claim 8 , wherein

the first nitride semiconductor layer comprises aluminum nitride (AlN), and

the second nitride semiconductor layer comprises aluminum gallium nitirde (AlGaN).

10. The power semiconductor device of claim 1 , wherein the source electrode, the drain electrode, and the gate electrode comprise at least one metallic material selected from nickel (Ni), Al, titanium (Ti), titanium nitride (TiN), platinum (Pt), gold (Au), ruthenium dioxide (RuO 2 ), vanadium (V), tungsten (W), tungsten nitride (WN), hafnium (Hf), hafnium nitride (HfN), molybdenum (Mo), nickel silicide (NiSi), cobalt silicide (CoSi 2 ), tungsten silicide (WSi 2 ), platinum silicide (PtSi), iridium (Ir), zirconium (Zr), tantalum (Ta), tantalum nitride (TaN), copper (Cu), ruthenium (Ru), and cobalt (Co).

11. A power semiconductor device comprising:

an anode electrode disposed on an epi structure and configured to be widened in a direction toward a first side;

a drain electrode disposed on the epi structure and arranged alternately with the anode electrode, and widened in a direction toward a second side facing the first side;

an insulating layer disposed on the anode electrode and the cathode electrode and configured to comprise a plurality of via contacts in contact with the anode electrode and the cathode electrode;

an anode electrode pad disposed in a first region on the insulating layer to be brought into contact with the via contact in contact with the anode electrode; and

a cathode electrode pad disposed in a second region separated from the first region on the insulating layer, and connected with the via contact in contact with the cathode electrode.

12. The power semiconductor device of claim 11 , wherein the insulating layer comprises:

a plurality of first via holes to expose the anode electrode disposed in the first region; and

a plurality of second via holes to expose the cathode electrode disposed in the second region.

13. The power semiconductor device of claim 12 , wherein the insulating layer comprises:

a plurality of first via contacts disposed in the plurality of first via holes to be brought into the anode electrode, and connected with the anode electrode pad; and

a plurality of second via contacts disposed in the plurality of second via holes to be brought into the cathode electrode, and connected with the cathode electrode pad.

14. The power semiconductor device of claim 12 , wherein the plurality of first via holes are provided in a shape of a trapezoid widening in a direction toward the first side in the first region, corresponding to the widening structure of the anode electrode.

15. The power semiconductor device of claim 12 , wherein the plurality of second via holes have a trapezoid shape widening in a direction toward the second side in the second region, corresponding to the widening structure of the cathode electrode.

16. The power semiconductor device of claim 11 , wherein the epi structure comprises a buffer layer, an undoped nitride semiconductor layer, a nitride semiconductor layer, and a cap layer which are disposed on the substrate sequentially.

17. The power semiconductor device of claim 16 , wherein

the anode electrode is bonded to the cap layer, and

the cathode electrode is disposed on the nitride semiconductor layer exposed through the cap layer and separated from the anode electrode by a predetermined distance.

18. The power semiconductor device of claim 16 , wherein the nitride semiconductor layer comprises:

a first nitride semiconductor layer disposed on the undoped nitride semiconductor layer; and

a second nitride semiconductor layer disposed on the first nitride semiconductor layer.

19. The power semiconductor device of claim 18 , wherein

the first nitride semiconductor layer comprises aluminum nitride (AlN); and

the second nitride semiconductor layer comprises aluminum gallium nitride (AlGaN).

20. The power semiconductor device of claim 11 , wherein the anode electrode and the cathode electrode comprise at least one metallic material selected from nickel (Ni), Al, titanium (Ti), titanium nitride (TiN), platinum (Pt), gold (Au), ruthenium dioxide (RuO 2 ), vanadium (V), tungsten (W), tungsten nitride (WN), hafnium (Hf), hafnium nitride (HfN), molybdenum (Mo), nickel silicide (NiSi), cobalt silicide (CoSi 2 ), tungsten silicide (WSi 2 ), platinum silicide (PtSi), iridium (Ir), zirconium (Zr), tantalum (Ta), tantalum nitride (TaN), copper (Cu), ruthenium (Ru), and cobalt (Co).