Tunneling magnetoresistance sensor
A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time.
1. A tunneling magnetoresistance sensor, comprising:
a substrate;
an insulating layer disposed on the substrate;
a tunneling magnetoresistance component embedded in the insulating layer, the tunneling magnetoresistance component comprising a plurality of magnetic tunneling junction units; and
a first electrode array disposed in the insulating layer and adjacent to the tunneling magnetoresistance component, the first electrode array comprising a plurality of first electrodes separated from each other by the insulating layer, the first electrodes being electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode, wherein each of the magnetic tunneling junction units is electrically connected to two neighboring first electrodes of the first electrode array;
wherein the first electrode array is embedded in the insulating layer and disposed below the tunneling magnetoresistance component;
and wherein each of the magnetic tunneling junction units comprises: a free layer, a pinned layer, and a tunnel barrier between the free layer and the pinned layer.
2. The tunneling magnetoresistance sensor of claim 1 , further comprising a plurality of first contact plugs, the first contact plugs being disposed in the insulating layer and electrically connecting the first electrodes with the magnetic tunneling junction units of the tunneling magnetoresistance component.