Boundary acoustic wave device
A boundary acoustic wave device includes a first medium layer made of a first dielectric material and a second medium layer made of a second dielectric material having an acoustic velocity different from the acoustic velocity of the first dielectric material. The first medium layer and the second medium layer are disposed on a piezoelectric substrate, and an IDT electrode is arranged along the interface between the piezoelectric substrate and the first medium layer. When the fast transverse bulk wave of the piezoelectric substrate has an acoustic velocity V 1 and a higher-order mode boundary acoustic wave has an acoustic velocity Va at an anti-resonance point, the boundary acoustic wave device satisfies the relationship Va>V 1.
1. A boundary acoustic wave device comprising:
a piezoelectric substrate;
a first medium layer made of a first dielectric material disposed on the piezoelectric substrate;
a second medium layer disposed on an upper surface of the first medium layer, made of a second dielectric material having an acoustic velocity different from an acoustic velocity of the first dielectric material; and
an IDT electrode arranged along an interface between the piezoelectric substrate and the first medium layer; wherein
a value of at least one of a normalized thickness of the first medium layer, a duty of the IDT electrode, and a normalized thickness of the IDT electrode is set such that the boundary acoustic wave device satisfies a relationship Va>V 1 , where V 1 represents an acoustic velocity of a fast transverse bulk wave of the piezoelectric substrate, and Va represents an acoustic velocity of a higher-order mode boundary acoustic wave at an anti-resonance point, such that the higher-order mode boundary acoustic wave is leaked to the piezoelectric substrate.
2. The boundary acoustic wave device according to claim 1 , wherein the boundary acoustic device satisfies a relationship Vr>V 1 , where Vr represents an acoustic velocity of a higher-order mode boundary acoustic wave at a resonance point.
3. The boundary acoustic wave device according to claim 1 , wherein the second medium layer has a higher acoustic velocity than the first medium layer.
4. The boundary acoustic wave device according to claim 1 , wherein the piezoelectric substrate is made of LiNbO 3 single crystal or LiTaO 3 single crystal.
5. The boundary acoustic wave device according to claim 4 , wherein the acoustic velocity of the first medium layer is less than the greater of an acoustic velocity in a slow transverse wave acoustic velocity of the LiNbO 3 single crystal and the acoustic velocity of the second medium layer.
6. The boundary acoustic wave device according to claim 1 , wherein the first medium layer is made of SiO 2 or SiON.
7. The boundary acoustic wave device according to claim 1 , wherein the second medium layer is made of at least one material selected from the group consisting of SiO 2 , SiN, SiON, AlN, AlO, Si, SiC, diamond-like carbon, and polysilicon.
8. The boundary acoustic wave device according to claim 1 , wherein the IDT electrode includes a metal layer made of a metal selected from the group consisting of Al, Ti, Fe, Cu, Ag, Ta, Au and Pt, or an alloy primarily including the metal.
9. The boundary acoustic wave device according to claim 8 , wherein the IDT electrode includes a multilayer metal film including a plurality of metal layers, each made of a metal selected from the group consisting of Al, Ti, Fe, Cu, Ag, Ta, Au and Pt, or an alloy primarily including the metal.