Semiconductor device, and display device and electronic equipment each having the same
View Patent ↗Amplitude of a data line is made small, thereby reducing power consumption. Included are a first transistor to which a first scan signal is supplied through a first scan line; a second transistor to which a second scan signal is supplied through a second scan line; a third transistor which is turned on or off depending on a first signal supplied from a current supply line through the first transistor and a second signal supplied from a data line through the second transistor; a pixel electrode; and a light-emitting element which emits light by driving current flowing between the pixel electrode and a counter electrode. The first signal cuts electrical connection between the current supply line and the pixel electrode through the third transistor, and the second signal makes the current supply line and the pixel electrode electrically connected through the third transistor.
1. A semiconductor device comprising:
a first transistor to which a first scan signal is applied to a gate through a first scan line, wherein the gate of the first transistor is connected to the first scan line;
a second transistor to which a second scan signal is applied to a gate through a second scan line;
a third transistor which is turned on or off depending on a potential of a current supply line, wherein either a source or a drain of the third transistor is connected to the first scan line;
a fourth transistor which is turned on or off depending on a first signal and a second signal applied to a gate;
a pixel electrode; and
a light-emitting element which emits light by a driving current which flows between the pixel electrode and a counter electrode,
wherein the first signal supplied through the first transistor and the third transistor from the first scan line is a signal which cuts an electrical connection between the current supply line and the pixel electrode through the fourth transistor; and
wherein the second signal supplied through the second transistor from a data line is a signal which makes the current supply line and the pixel electrode electrically connected to each other through the fourth transistor.
2. The semiconductor device according to claim 1 , wherein a holding capacitor is provided between the gate of the fourth transistor and the current supply line.
3. The semiconductor device according to claim 1 , wherein the first transistor and the second transistor are N-channel transistors and the third transistor and the fourth transistor are P-channel transistors.
4. A semiconductor device comprising:
a first transistor to which a first scan signal is applied to a gate through a first scan line, wherein the gate of the first transistor is connected to the first scan line;
a second transistor to which a second scan signal is applied to a gate through a second scan line;
a third transistor which is turned on or off depending on a potential of a current supply line;
a fourth transistor which is turned on or off depending on the first scan signal, wherein either a source or a drain of the fourth transistor is connected to the first scan line;
a fifth transistor which is turned on or off depending on a first signal and a second signal applied to a gate;
a pixel electrode; and
a light-emitting element which emits light by a driving current which flows between the pixel electrode and a counter electrode,
wherein the first signal supplied through the first transistor and the fourth transistor from the first scan line is a signal which cuts an electrical connection between the current supply line and the pixel electrode through the fifth transistor; and
wherein the second signal supplied through the second transistor from a data line is a signal which makes the current supply line and the pixel electrode electrically connected to each other through the fifth transistor.
5. The semiconductor device according to claim 4 , wherein a holding capacitor is provided between the gate of the fifth transistor and the current supply line.
6. The semiconductor device according to claim 4 , wherein the first transistor, the second transistor, the third transistor, and the fourth transistor are N-channel transistors and the fifth transistor is a P-channel transistor.
7. The semiconductor device according to any one of claims 1 and 4 , wherein an amplitude of the first scan signal is larger than an amplitude of the second scan signal.
8. A display device wherein the semiconductor device according to any one of claims 1 and 4 is provided for each pixel.
9. Electronic equipment wherein the display device according to claim 8 is provided.
10. A driving method of a semiconductor device comprising:
a first transistor to which a first scan signal is applied to a gate through a first scan line;
a second transistor to which a second scan signal is applied to a gate through a second scan line;
a third transistor which is turned on or off depending on a potential applied to a gate;
a pixel electrode; and
a light-emitting element which emits light by a driving current which flows between the pixel electrode and a counter electrode, the driving method comprising:
a first period during which the first transistor is turned on by the first scan signal, and a first signal for cutting an electrical connection between a current supply line and the pixel electrode through the third transistor is inputted to the gate of the third transistor through the first transistor from the current supply line;
a second period during which the first transistor is turned off by the first scan signal, and the second transistor is turned off by the second scan signal; and
a third period during which the second scan signal is inputted to the second transistor, wherein in the third period, in the case where a potential of a data line is smaller than a potential of the second scan signal, a second signal for electrically connecting between the current supply line and the pixel electrode through the third transistor is inputted to the gate of the third transistor through the second transistor from the data line.
11. The driving method of the semiconductor device according to claim 10 , wherein the first signal is inputted through the first transistor from a wire having a potential different from that of the current supply line.
12. The driving method of the semiconductor device according to claim 10 , wherein the first transistor and the second transistor are N-channel transistors and the third transistor is a P-channel transistor.
13. A driving method of a semiconductor device comprising:
a first transistor to which a first scan signal is applied to a gate through a first scan line;
a second transistor to which a second scan signal is applied to a gate through a second scan line;
a third transistor which is turned on or off depending on a potential of a current supply line;
a fourth transistor which is turned on or off depending on a signal applied to a gate;
a pixel electrode; and
a light-emitting element which emits light by a driving current which flows between the pixel electrode and a counter electrode, the driving method comprising:
a first period during which the first transistor is turned on by the first scan signal, and a first signal for cutting an electrical connection between the current supply line and the pixel electrode through the fourth transistor is inputted to the gate of the fourth transistor through the first transistor and the third transistor from the first scan line;
a second period during which the first transistor is turned off by the first scan signal, and the second transistor is turned off by the second scan signal; and
a third period during which the second scan signal is inputted to the second transistor, wherein in the third period, in the case where a potential of a data line is smaller than a potential of the second scan signal, a second signal for electrically connecting between the current supply line and the pixel electrode through the fourth transistor is inputted to the gate of the fourth transistor through the first transistor and the second transistor from the data line.
14. The driving method of the semiconductor device according to claim 13 , wherein the first transistor and the second transistor are N-channel transistors and the third transistor and the fourth transistor are P-channel transistors.
15. A driving method of a semiconductor device comprising:
a first transistor to which a first scan signal is applied to a gate through a first scan line;
a second transistor to which a second scan signal is applied to a gate through a second scan line;
a third transistor which is turned on or off depending on a potential of a current supply line;
a fourth transistor which is turned on or off depending on the first scan signal;
a fifth transistor which is turned on or off depending on a signal applied to a gate;
a pixel electrode; and
a light-emitting element which emits light by a driving current which flows between the pixel electrode and a counter electrode,
the driving method comprising:
a first period during which the first transistor and the fourth transistor are turned on by the first scan signal, and a first signal for cutting an electrical connection between the current supply line and the pixel electrode through the fifth transistor is inputted to the gate of the fifth transistor through the first transistor and the fourth transistor from the first scan line;
a second period during which the first transistor is turned off by the first scan signal, and the second transistor is turned off by the second scan signal; and
a third period during which the second scan signal is inputted to the second transistor,
wherein in the third period, in the case where a potential of a data line is smaller than a potential of the second scan signal, a second signal for electrically connecting between the current supply line and the pixel electrode through the fifth transistor is inputted to the gate of the fifth transistor through the first transistor from the data line.
16. The driving method of the semiconductor device according to claim 15 , wherein the first transistor, the second transistor, the third transistor, and the fourth transistor are N-channel transistors and the fifth transistor is a P-channel transistor.
17. The driving method of the semiconductor device according to any one of claims 10 , 13 and 15 , wherein an amplitude of the first scan signal is larger than an amplitude of the second scan signal.